SI6973DQ ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-01058—Rev. A, 22-May-002-1Si6973DQNew ProductVishay Siliconix
SI6973DQ
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si6973DQ
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.030 @ sz = -A.5 v -4.8
-20 0.039 @ VGS = -2.5 v -A.2
0.055 @ VGS = -1.8 v -3.5
TSSOP-8
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Top View
P-Channel MOSFET
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P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS i 8
TA = 25''C -4.8 -4.1
Continuous Drain Current (TJ = 150°C)3 ID
TA = 70°C -3.9 -3.2 A
Pulsed Drain Current (10 us Pulse VWdth) IBM -30
Continuous Source Current (Diode Conduction)" ls -1.0 -0.7
TA=25°C 1.14 0.83
Maximum Power Dissipation" PD W
TA = 70°C 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 86 110
Maximum Junction-to-Ambient" RthJA
Steady State 124 150 °CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 52 65
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71190
S-01058-Rev. A, 22-May-00
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Si6973DQ
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGs, ID = -250 pA -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = i 8 V i 100 nA
Zero Gate Voltage Drain Current IDss Vos = -16 V, VGS = O V -1 WA
VDs=-16V,VGs=0V,To=700C -25
On-State Drain Currenta low") Vos = -5 V, VGs = -4.5 V -20 A
Vss=-45 V, ID =-4.8A 0.025 0.030
Drain-Source On-State Resistancea rDsmm VGs = -2.5 V, ID = -4.2 A 0.033 0.039 Q
VGS = -1.8 V, ID = -3.5 A 0.046 0.055 Q
Forward Transconductancea gts Vos = -5 V, b = -4.8 A 21
Diode Forward Voltagea VSD Is = -1.0 A, VGS = 0 V -0.65 -1 .1
Dynamic"
Total Gate Charge Q9 21 30
Gate-Source Charge Qgs VDs = -1 0 V, VGS = -A.5 V, ID = -4.8 A 4.4 no
Gate-Drain Charge di 3.3
Turn-On Delay Time td(on) 27 40
Rise Time tr VDD = -10 V, RL = 10 Q 27 40
Turn-Off Delay Time tu(oti) ID E -1 A, VGEN = -4.5 V, Rs = 6 Q 93 140 ns
Fall Time tf 43 65
Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 Alps 30 50
a. Pulse test; pulse width s 300 ps. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 . 3O /
Tc = -55oC
VGS = 5 thru 2.5 v
I , / 125°C
ig' 2V .cjC:'.". l F,
- - I To
E 18 l E 18 l 2,5 C
‘5 'r,
E 12 a 12
o 1.5 V D
- 6 T - 6
0.5, 1 V
0 3 6 9 12 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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2-2 S-01058-Rev. A, 22-May-00
VISHAY
Si6973DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.08
g v - 1 8 v I
75 GS - . /
ill 0.06
t ,,,,eW''''" VGs = 2.5 v
m,.,.,....-''
I 0.04 _,,,,,,,,--''"
53; VGS = 4.5 V
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
1/Ds=10V
ID=4.8A /
VGS — Gate-to-Source Voltage (V)
0 5 1O 15 20 25
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
O 4 B 12 16 20
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l l
163:3? /
1.4 w,,,,,,,-'''"
1.2 ///
.,-''"'
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 4.8 A
"ss-_,
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71190
S-01058-Rev. A, 22-May-00
www.vishay.com . FaxBack 408-970-5600
Si6973DQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
(h4 100
0.3 y/
ww''''
ID = 250 “A
w'''" g V
0.1 / a N
w,,,,'''' 20 s;
-0 1 ,
w''''' "ms
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
3% 0.2
if',' g Notes:
El ' 0.1 T
8 a 0.1 PDM
(-i,' (E 0.05 l
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 124°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
8 lg 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-01058-Rev. A, 22-May-00
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