SI6969DQ ,Dual P-Channel 1.8-V (G-S) MOSFETS-59527—Rev. A, 19-Oct-982-1Si6969DQVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI6973DQ ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-01058—Rev. A, 22-May-002-1Si6973DQNew ProductVishay Siliconix
SI6969DQ
Dual P-Channel 1.8-V (G-S) MOSFET
C=7'" .
VISHAY SI6969DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY otfJ'd
Vos (V) rosm (Q) ID (A) ttet,', (Fst 6
0.034 @ VGS = -4.5 v i4.6 't 9069‘ am
-12 0.050@VGs= -2.51/ i3.8 b'
0.075@sz= -1.8V i3.0 l."
TSSOP-8
D1 [1 o E] D2 G1 'T G2
SI I: Si6969DQ El 82 I
SI E E] S2
G1 IE Csl G2
Top Ihew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 12
Gate-Source Voltage VGS i8 V
TA = 25°C i4.6
Continuous Drain Current (T J = 150°C)a- b ID
TA = 70°C d: 3.8 A
Pulsed Drain Current IDM d: 30
Continuous Source Current (Diode Conduction)' b Is -1.25
TA = 25''C 1.1
Maximum Power Dissipation' b TA = 7 O'' C PD 0.72 W
Operating Junction and Storage Temperature Range Tu, Tstg ~55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 110
Maximum Junction-to-Ambienta RthJA °CIW
Steady State 115
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
DocumentNumber: 70828 www.vishay.com
S-59527-Rev. A, 19-Oct-98 2-1
Si6969DQ
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = -250 pA -(h45 V
Gate-Body Leakage lsss VDS = 0 V, VGS = i 8 V i 100 nA
1/Ds=-9.6V,VGs=0V -1
Zero Gate Voltage Drain Current loss liA
VDS= -9.6V,VGS=0V,TJ=7O°C -25
On-State Drain Currenta low”) VDS 2 -8 V, VGS = -4.5 V -30 A
VGS = -4.5 V, ID = -4.6 A 0.027 0.034
Drain-Source On-State Resistancea roam) VGS = -2.5 V b = -3.8 A 0037 th050 Q
VGS = .13 V, lro = -3.0 A 0.053 0.075
Forward Transconductancea gfs VDS = -8 V, ID = -4.6 A 18 S
Diode Forward Voltagea I/sro Is = -1.25 A, VGs = 0 V -0.68 -1.1
Dynamicb
Total Gate Charge % 21 40
Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -4.6 A 4.5 nC
Gate-Drain Charge di 3.5
Turn-On Delay Time td(on) 25 50
Rise Time tr VDD = -6 V, RL = 6 Q 35 60
Turn-Off Delay Time tum ID _ -1 A, VGEN = -4.5 V, Rs = 6 Q 80 150 ns
Fall Tlme tf 40 80
Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 A413 50 100
a. Pulsetest; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 70828
S-59527-Rev. A, 19-Oct-98
VISHAY
Si6969DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30 30 l l f
Tc = -55°C
Vss = 5 thru 2,5 v 1 l
24 24 25°C I
g.] ii.:.".
E 18 2 V E 18 125°C 7
ID tl)
E 12 , E 12
f 1.5 V f
0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
V68 = 1.8 V l
A 3200
V C" 'ss....,,, ISS
Eo' 8 2400
ty,t a
l 0 1600 l
F 800 Ns, Coss
0 Crss
0 6 12 18 24 30 0 2 4 6 8 10 12
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
4.5 l l 1.4 l l ,,,,,,w'''
A Vros=6V sz=4.5v
ty 3.is-ko=4.6A / A ID=4.6A ',,,,,,w''''''
g . " g, 1 2 I
.9 w .
fi,' / 8 ,,,,P"
e 2.7 .2 w /
3 " 8 %
T r': g 1.0
s, O o
9 1.8 ' v r,,,,-''"
m l o 0.8
0 0.9 =
0.0 0.6
0 3 6 9 12 15 18 21 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70828 www.vishay.com
S-59527-Rev. A, 19-Oct-98
Si6969DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30 0.08
A T J = 150°C "ii' 0.06
s. 10 m
E) E 0.05 l
5 1’ I =4.6 A
'i', g; 0.04 t
3 8 N,
co I 0.03
I E" "ss-.....,,,,,,,
_ J) J02
1 0.00
0.00 0.2 0.4 0.6 0.8 1..o 1.2 1.4 2 4 6 8
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.5 l l 30
0.4 ID = 250 “A l 25
f, 0.2 I it
a w" a 15
> o,p'''' a l
g? 0.1 " [f N
8 10 _
> 0.0 's,
-0.1 ops'''' ,
s,,,,,,,,,,,-''''''''" "s..
-0.2 0
-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RthJA = 115°C/W
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
IO 1 00 600
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DocumentNumber: 70828
S-59527-Rev. A, 19-Oct-98
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