SI6967DQ ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-59525—Rev. C, 12-Oct-982-1Si6967DQVishay Siliconix
SI6967DQ
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si6967DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY otf, [fl'
VDs(V) rosmnusz) low Ite'?,', Cos'
0.030 @ vGS = -A.5 v cl: 5.0 x C,w'' wxssis
-8 0.045 @ VGS = -225 v $400 9 Q
(h070@VGs=-1,8V i3.0 \g
TSSOP-8
D1 E q D2 G1 G2
SI LE Si6967DQ CE S2 l I
S, IE E! S2
G1 IE G2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = tttV C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros -8
Gate-Source Voltage Kas 3: 8
TA = 25°C l 5.0
Continuous Drain Current (To = 150°c)a. b lo
TA = 70°C $400 A
Pulsed Drain Current IDM d: 30
Continuous Source Current (Diode Conduction)' b Is -1.25
TA = 25°C 1.1
Maximum Power Dissipation' b PD W
TA = 70°C 0.72
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 110
Maximum Junction-to-Ambient" thJA °C/W
Steady State 115
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
DocumentNumber: 70811
S-59525-Reu C, 12-Oct-98
www.vishay.com . FaxBack 408-970-5600
Si6967DQ
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm Vos = VGs, ID = -250 p.A -0.45 V
Gate-Body Leakage lsss 1/ros = O V, VGs = i 8 V i 100 nA
VDs = -6.4 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS pA
Vros---64 V,VGS= 0V, TJ=70°C -25
On-State Drain Currenta ID(on) VDS 2_' -8 V, VGS = -4.5 V -30 A
N/ss = -A.5 V, ID = -51) A 0.024 0.030
Drain-Source On-State Resistance" rDS(0n) VGS = -2.5 V, ID = -4.0 A 0.033 0.045 Q
VGS = -1.8 V, ID = -3.0 A 0048 0.070
Forward Transconductancea gfs Vos = -8 V, ID = -51) A 18 S
Diode Forward Voltagea VSD Is = -1.25 A, VGS = 0 V Ah68 -1 .1
Dynamicb
Total Gate Charge Q9 20 40
Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -5.0 A 4.5 nC
Gate-Drain Charge ' 3.6
Turn-On Delay Time td(on) 20 50
Rise Tlme tr VDD = -6 V, RL = 6 Q 30 60
Turn-Ott Delay Time tam '0 E -1 A, VGEN = -A.5 V, RG = 6 Q 85 150 ns
Fall Time k 50 90
Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 A/gs 50 100
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70811
S-59525-Rev. C, 12-Oct-98
VISHAY
Si6967DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
24 VGS = 5 thru 2,5 V
Cl] Ct
E 18 2 V E
Es 12 E
f 1.5 v f
0 2 4 6 8
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.08
.3 0.06 8
I 0.04 (f
(ii" o
L 0.02
O 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 6 V
g 3 6 - ID = 5.0 A A
g) . g
i E G"
g 2.7 f E M
6; L? E
c', C o
"r C) z
P. 1.8 I v
0 I E"
I o// i'-)
8 0.9 _
0 4 8 12 16 20
Q9 - Total Gate Charge(nC)
Transfer Characteristics
Tc = -551
24 25°C \!‘I
18 125°C -
0 0.5 1.0 1.5 2.0 2.5 3.0
V68 - Gate-to-Source Voltage (V)
Capacitance
3200 'ss,,,,, Ciss
"s............,
1600 \
800 ssc.'.'?"'-----.
'"---,
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGS = 4.5 V
l.4 - ID: 5.0 A m.,,--'''"'
1.2 w"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
DocumentNumber: 70811
S-59525-Reu C, 12-Oct-98
www.vishay.com . FaxBack 408-970-5600
Si6967DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
TJ = 15000 A 0.05
a? sc.!..
Tz,' E 0.04
tz o-I
5 ii' l ID = 5.0 A
g 5 0.03
(f I 0.02 \
" 0.01
0.00 0.2 0.4 0.6 0.8 1..0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) N/ss - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
th8 30
0.6 ID = 250 MA 25 "
7 20 (
8 wrr''''' l
E 0.2 g
g / g 15 l
é -0.0 w,,,,-'''''''' /il N
o 10 N
> -0Q m,,,--"'''' 's,,
-0.4 5 'cs,
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 tral 1 m3 10-2
Notes:
_.L: _
1. Duty Cycle, D =
2. Per Unit Base = RmJA = 115°CNV
3. Tou - TA = ProuZeuA(t)
4. Surface Mounted
Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70811
S-59525-Rev. C, 12-Oct-98
:
www.loq.com
.
