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SI6963DQ
Dual P-Channel 2.5-V (G-S) MOSFET
VISHAY
New Product
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.050 @ l/GS = -4.5 v -3.5
-20 0.085 @ VGS = -2.5 v -2.7
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P-Channel MOSFET
Si6963DQ
Vishay Siliconix
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annel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS 112
TA=25°C -3.5 -3.0
Continuous Drain Current (T J = 150°C)3 ID
a-- 70°C -2.8 -2.5
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction)" Is -1.25 -O.7
TA=25°C 1.14 0.83
Maximum Power Dissipation" PD W
TA = 70°C 0.73 0.53
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 86 110
Maximum Junction-to-Ambienta RthJA
Steady State 124 150 "C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 52 165
a. Surface Mounted on FR4 Board.
Document Number: 71812 www.vishay.com
S-20220-Rev. D, Ol-Apr-OC?
Si6963DQ
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, b = -250 IIA -0.6 -1.4 V
Gate-Body Leakage less l/DS = o v, N/ss = i 12 v l 100 nA
VDs=-20V,VGs=0V -l
Zero Gate Voltage Drain Current loss VDs = -20 V, l/ss = 0 V, To = 55''C -25 WA
On-State Drain Currenta Imon) VDS 2 -5 V, VGS = -4.5 V -30 A
VGS = -4.5 V, ID = -3.5 A 0.037 0.050
Drain-Source On-State Resistancea rros(on) Q
VGS = -2.5 V, ID = -2.7 A 0.062 0.085
Forward Transconductancea 9ts Vos = -10 V, ID = -3.5 A 10 S
Diode Forward Voltage3 VSD Is = -1.25 A, Veg = 0 V -0.72 -1.2
Dynamicb
Total Gate Charge Qg 12.5 20
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V, b = -3.5 A 1.9 nC
Gate-Drain Charge di 3.2
Turn-On Delay Time tdwn) 20 30
Rise Time tr VDD = -10 V, RL = 10 Q 26 40
Turn-Off Delay Time two In E -1 A, VGEN = -4.5 V, Re = 6 Q 48 75 ns
Fall Time tr 30 45
Source-Drain Reverse Recovery Time trr IF = -1.25 A, dildt = 100 Alps 30 5O
a. Pulsetest; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30 I l /
VGS = 5 thru 3.5 V To = -55°C (ff
24 24 I
l/ --"- 3V // 125°C
<3 / ti:, l
- - I a
g 18 , g 18 N 25 C -
' 2.5V E
S 12 E 12
- 6 2 v - 6
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com DocumentNumber: 71812
S-20220-Rev. D, 01-Apr-02
VISHAY
Si6963DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.16
E VGS = 2.5 V
8 0.12
' 0.08
E _,,......,,.,.,-'
Jd VGS = 4.5 v
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
Vros=10V
5 - lro=3.5A
fi).' p"
g. 3 "
o 3 6 9 12 15
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
O 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l 1 w'''''
VGS = 4.5 V
ID = 3.5 A
,,,w'''"
ow'''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 3.5A
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71812
S-20220-Rev. D, Ol-Apr-OC?
www.vishay.com
Si6963DQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
0.4 / 80
0.2 D = 250 WA o,,,,,,,-''''''' Ir
0.0 40
V650,» Variance (V)
Power (W)
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g E 0.2
"if',' E
it ' th1 T
T7 E 0.1 PDM
'l': g l
T, _ 0.05
g -21 t2 t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RthJA =115°CNV
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
8 a, 0.1
g _ 0.05
Z 0.02
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71812
S-20220-Rev. D, 01-Apr-02
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