SI6956DQ ,Dual N-Channel 20-V (D-S) MOSFET FaxBack 408-970-5600S-00652—Rev. E, 27-Mar-002-1Si6956DQVishay Siliconix
SI6956DQ
Dual N-Channel 20-V (D-S) MOSFET
VISHAY
Si6956DQ
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
20 0.09@VGS=10V i2.5
0.175@VGs=4.5V cel.8
TSSOP-8
D1 II o E] De
SI LE Si6956Dt2 CEI S2 e1 OJ
S, I: E S2
G1 E :1 G2
Top View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGs 21:20
TA = 25°C d: 2.5
Continuous Drain Current (T J = 150"C)a ID
TA = 70°C d: 2.0
Pulsed Drain Current IDM :20
Continuous Source Current (Diode Conduction)" Is 1.25
TA = 25°C 1_0
Maximum Power Dissipation" PD W
TA = 70“C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 "C/W
a. Surface Mounted on FR4 Board! s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70173
S-00652-Reu E, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si6956DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 0A 1.0 V
Gate-Body Leakage lass VDS = 0 V, VGS = l 20 V i 100 nA
Vros=20VVss=0V 1
Zero Gate Voltage Drain Current Koss 11A
VDS=20V,VGS=0V,TJ=55°C 25
On-State Drain Currents low") Vos = 5 V, VGS = 10 V 14 A
VGS = 10 v, ID = 2.5 A 0.065 0.09
Drain-Source On-State Resistance" rDS(on) Q
VGS=4.5 v, ko-- 1.8 A 0.100 0.175
Forward Transconductancea git VDS = 15 V, ID = 2.5 A 5
Diode Forward Voltagea VSD ls = 1.25 A, VGs = 0 V 0.8 1.2 V
Dynamich
Total Gate Charge Q9 7 10
Gate-Source Charge Qgs VDS = 10 V, VGS = 10 V, ID = 2.5 A 0.9 nC
Gate-Drain Charge di 2.1
Turn-On Delay Time td(on) 11 20
Rise Time tr VDD = 10 v, RL = 10 Q 11 20
Turn-Off Delay Time tam '0 E 1 A, VGEN = 10 v, Rs = 6 Q 16 30 ns
Fall Time tt 6 15
Source-Drain Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 Alps 45 70
a. Pulse test; pulse width 3 300 ps, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70173
S-00652-Rev. E, 27-Mar-00
VISHAY Si6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 I 20
// "e'''''''"'" 6 v
16 p, 16 To = -55''C
, Vss=10,9,8,7V "ss 25cc
<3 "ia-f, /
E 12 5 V E 12 125°C
(i 8 / (i, a
o 4 V o
- 4 - 4
0 .1., fl 0
0 1 2 3 4 5 0 2 4 6 8 10
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.30 1000
0.25 I
v VGS = 4.5 V C?
8 0.20 3 (
g 8 600
8 0.15 l 15
q ,,,V' p, k Coss
6 8 400
L 0.10 I See,
g Vss = 10 v o \ \ Ciss
= 0.05 =7 'ss,,,. Crss
a'---..-,
0 2 4 6 8 10 O 4 8 12 16 20
ID - Drain Current (A) l/ns - Drain-to-Source Voltage(V)
10 Gate Charge 2 O On-Resistance vs. Junction Temperature
l l l l l l
VGs=1O V Vss=10V
E 8 ID=25A A lro=2.5A
'l) ///" E 1.5 "w""
'8' 8 "w''''''
i; 6 I g G" "-'''"
g il'! E 1.0
is, 4 / é o o,,-'''
<13 / Cl ?5 w--'''''"
"ii,'' I
I / gr, 0.5
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70173
www.vishay.com . FaxBack 408-970-5600
S-00652-Reu E, 27-Mar-00
Si6956DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGs(m) Variance (V) | S — Source Current (A)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ=15000
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
1 0 Threshold Voltage
"ss,, ID = 250 11A
-50 -25 0 25 50 75 100 125 150
T: - Temperature (°C)
rDS(on) — On—Resistance( 9)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.5A
2 4 6 8 IO
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.001 0.01 0.1 1 10
Tune (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2
Square Wave Pulse Duration (sec)
Notes:
-1 tl _
- ta -
1. Duty Cycle, D = T;
2. Per Unit Base = RthJA =125°CNV
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
www.vishay.com . FaxBack 408-970-5600
Document Number: 70173
S-00652-Rev. E, 27-Mar-00
:
www.loq.com
.
