SI6955DQ ,Dual 30V P-Channel PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Batter ..
SI6956DQ ,Dual N-Channel 20-V (D-S) MOSFET FaxBack 408-970-5600S-00652—Rev. E, 27-Mar-002-1Si6956DQVishay Siliconix
SI6955DQ
Dual 30V P-Channel PowerTrench MOSFET
Si6955DQ G2 G1 S2 S1 S2 S1 D2 D1 January 2002 Si6955DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –2.5 A, –30 V, R = 85 mΩ @ V = –10 V. DS(ON) GS Fairchild's Semiconductor’s advanced PowerTrench R = 190 mΩ @ V = –4.5V. DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Extended V range (±20V) for battery applications GSS ratings (4.5V – 20V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Battery protection • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1) –2.5 A D – Pulsed –20 P Power Dissipation for Single Operation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 100 °C/W θJA (Note 1b) 125 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6955 Si6955DQ 13’’ 12mm 2500 units Si6955DQ Rev C(W) 2002
