SI6955ADQ ,Dual P-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-99450—Rev. A, 06-Dec-992-1Si6955ADQNew ProductVishay Siliconix
SI6955ADQ
Dual P-Channel 30-V (D-S) MOSFET
Si6955ADQ
VISHAY
New Product
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY ,
VDs(V) rosmnusa) low © (.6
0.080@VGs=-101/ +2.9 'tt ",etee
J135@VGs---<5V $22 tto
TSSOP-8
D1 q :1 D2 G1 'T G2 'T
SI E Si6955ADQ CEI S2
31 El S2
G1 Csl G2
Top View
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos -30 V
Gate-Source Voltage VGS $20
TA=25°C $2.9 ce2.5
Continuous Drain Current (To = 15000)3 ID
TA--70''C 12.3 12.0 A
Pulsed Drain Current (10 us Pulse Width) IDM i 20
Continuous Source Current (Diode Conduction)a ls -1.0 -0.70
TA=25°C 1.14 0.83
Maximum Power Dissipationa PD W
TA = 70°C 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 88 110
Maximum Junction-to-Ambient" RNA
Steady State 124 150 °C/W
Maximum Junction-to-Foot Steady State RthJF 69 83
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71103
S-99450-Rev, A, 06-Dec-99
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Si6955ADQ
Vishay Siliconix New Product
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SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/os = VGS, ID = -250 IIA -1 .0 V
Gate-Body Leakage IGSS Vros = 0 V, VGS = l 20 V i 100 nA
Vos = -24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss WA
VDs=-24V,Vss=0V,Tu=55c'C -10
On-State Drain Currenta |D(on) V95 2 -5 V, VGS = -10 V -1 5 A
VGS = -1 0 V, ID = -2.9 A 0.062 0.080
Drain-Source On-State Resistancea rDS(on) Q
VGS---A.5 V, ID=-2.2 A 0.105 0.135
Forward Transconductancea gts Vos = -15 V, ID = -2.9 A 5 S
Diode Fon/vard Voltagea VSD Is = -1.0 A, VGS = 0 V Ah82 -1.2
Dynamic"
Total Gate Charge % 5.8 8
Gate-Source Charge Qgs VDs = -10 V, VGS = -5 V, b = -2.9 A 2 nC
Gate-Drain Charge di 1.9
Turn-On Delay Time td(on) 8 15
Rise Time tr VDD = -10 V, RL =10 Q 9 18
Turn-Off Delay Time tdwff) ID _ -1 A, VGEN = -10 V, RG = 6 Q 21 40 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = -1l) A, di/dt = 100 Alps 30 50
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20 l I (
AS=10t1ru6V Tc=-55°C (/
16 I 16 l I
A W A 25 C /
SE <5 y 125°C
E 12 E 12
E B E 8
cl ' 4V ,
- 4 - 4
O 2 4 6 8 0 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) Kas - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71103
2-2 S-9945ir-Rev, A, 06-Dec-99
VISHAY
Si6955ADQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.24
g 0.18
8 VGS = 4.5 v ",,//
I 0.12 o,,,--'''''
' m.....-'"
if VGS = 10 V
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
v03 = 10 v
ID = 3.9 A
VGS — Gate-to-Source Voltage (V)
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I s — Source Current (A)
0 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
"----,
200 \ _ Coss
"s-.-..
0 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 - ID = 3.9 A "
',,,,,,w''''"
s,,,,,,,,.''''''
0.8 ,/
',,,,w'''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
024 ID: 3.9A
0.16 (
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71103
S-99450-Rev, A, 06-Dec-99
www.vishay.com . FaxBack 408-970-5600
Si6955ADQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 25
0.6 // 20 l
ID = 250 “A )
(h4 '/ 15
Power (W)
VGS(th) Variance (V)
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
3 a 0.1 ''r
(-i,' (E 0.05
ly, -ly-1 ta
a 0.02 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 124°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
g E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-9945ir-Rev, A, 06-Dec-99
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