SI6954DQ ,30-V (D-S) Dual FaxBack 408-970-5600S-49534—Rev. C, 06-Oct-972-1Si6954DQVishay Siliconix
SI6954DQ
30-V (D-S) Dual
VISHAY
Si6954DQ
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
30 0.065@VGS=10V $3.9
0.095@VGs=4.5V $3.1
TSSOP-8
D1 . Es] D2
SI Si6954DQ Z] S2
S, 3] S2
G1 Cs] G2
Top View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGs ce20
TA = 25°C i 3.9
Continuous Drain Current (TJ = 150"C)a ID
TA = 70°C d: 3.1
Pulsed Drain Current IDM :20
Continuous Source Current (Diode Conduction)" ls 1.25
TA = 25°C 1_0
Maximum Power Dissipation" PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 "CA/V
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70179
S-49534-Rev. C, 06-Oct-97
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Si6954DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vesah) Vos = VGS, ID = 250 pA 1.0 V
Gate-Body Leakage IGSS Vos = 0 V, VGS = i 20 V i 100 nA
Zero Gate Voltage Drain Current IDss Vos = 30 V, VGS = 0 V 1 y1A
VDs=30V,VGs=0V,To=55''C 25
On-State Drain Currenta loom Vros 2 5 V, VGS = 10 V 15 A
VGS =10 V, ID = 3.9 A 0.043 0.065
Drain-Source On-State Resistance" fosmn) Q
VGS = 4.5 v, ID = 3.1 A 0.075 0.095
Forward Transconductancea git VDs = 15 V, ID = 3.9 A 7.0
Diode Forward Voltagea VSD ls = 1.25 A, VGS = o v 0.77 1.2 V
Dynamicb
Total Gate Charge Q9 9.8 15
Gate-Source Charge Qgs VDS = 10 V, VGS = 10 V, ID = 3.9 A 2.1 nC
Gate-Drain Charge di 1.6
Turn-On Delay Time td(on) 9 15
RiseTIme tr VDD=1OV,RL=1OQ 6 12
Turn-Off Delay Time tam ID E 1 A, VGEN = 10 v, Rs = 6 Q 18 27 ns
Fall Time tf 12
Source-Drain Reverse Recovery Time trr IF = 1. 25 A, di/dt = 100 N113 48 80
a. Pulse test; pulse width 5 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70179
S-49534-Rev. C, 06-Oct-97
VISHAY
Si6954DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 . ,
Vss=10thru6V l
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.16 I
V VGS = 4.5 V
g 0.12
“F -,,,,,Y'
8 0.08 o,....--''''
S VGS = 10V
F? 0.04
O 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
VDS = 10 V
E 8 - ID = 3.9 A
0 2 4 6 8 10
Q9 - Total Gate Charge(nC)
rDS(on)— On—Resistance ( $2)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC = -55''C /
25l j,
16 \l,
12 125°C
O 1 2 3 4 5 6
VGs - Gate-to-Source Voltage (V)
Capacitance
600 V,,,.,..,...., Ciss
300 \ Coss
"s--....
150 l a----,
0 5 10 15 20 25 30
Vos - Drain-to-Source Voltage(V)
2 0 On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.9 A
1.6 /'
1.2 ",.,--''''''''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
Document Number: 70179
S-49534-Rev. C, 06-Oct-97
www.vishay.com . FaxBack 408-970-5600
Si6954DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.20
To = 150°C
A 0.16
A 10 Ci
'll g 0.12
5 ii' b = 3.9 A
5% 8 0.08
- 3 0.04
0.4 0.6 0.8 1.0 1.2 1.4 1.6 o 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) Ves - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l l 30
I = 2 uA l
0.2 D 50! 25
-0.0 \
E -0.2 'ss,, t (
15 '- 15
?..s, Mh4 'tc g l
fu-i. 's, CL
8 \ 10
> -0.6 _
-0.8 's
-1.0 0
- - 7 1 1
50 25 0 25 50 5 00 125 50 0.01 0.1 1 10 30
T J - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Thermal Impedance
Normalized Effective Transient
Single Pulse
10-4 10-2 1o-1
Notes:
- t2 - t
1. Duty Cycle, D = i,
2. Per Unit Base = RthJA =125°CNV
3. TJM - TA = PDMZthoA(t)
4. Surface Mounted
Square Wave Pulse Duration (sec)
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Document Number: 70179
S-49534-Rev. C, 06-Oct-97
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