SI6946DQ ,20-V (D-S) Dual FaxBack 408-970-5600S-49534—Rev. E, 06-Oct-972-1Si6946DQVishay Siliconix
SI6946DQ
20-V (D-S) Dual
VISHAY
Si6946DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
20 0.080@sz= 4.5 v 2.8
0.110@sz= 2.5 v 2.1
TSSOP-8
D1 I: o E] D2
SI LE Si6946DQ II S2
S1 I: E] Se
G1 [Z Csl G2
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS i 8
TA = 25°C 2.8
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 22
Pulsed Drain Current los, 20
Continuous Source Current (Diode Conduction)a ls 1.0
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 "C/W
a. Surface Mounted on FR4 Board! s 10 sec.
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Document Number: 70177
S-49534-Rev. E, 06-Oct-97
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Si6946DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 0A 0.6 V
Gate-Body Leakage lass Vos = 0 V, VGs = i8 V i 100 nA
Vros=20VVss=0V 1
Zero Gate Voltage Drain Current Koss “A
VDs=20V,VGs=0V,To=70''C 5
On-State Drain Currents bum) Vos = 5 V, VGS = 4.5 V $10 A
VDS=5V,VGS=2.5V i4
VGS=4.5 v. ID=2.8A 0.080
Drain-Source On-State Resistancea rDS(on) Q
VGS=2.5V, ID=2.1 A 0.110
Forward Transconductancea gig VDs = 15 V, ID = 2.8 A 12 S
Diode Forward Voltagea VSD ls = 1.0 A, I/ss = 0 V 1.2 V
Dynamic"
Total Gate Charge Q9 16 4O
Gate-Source Charge Qgs VDs = 10 V, VGS = 4.5 V, ID = 2.8 A 3 nC
Gate-Drain Charge di 6
Turn-On Delay Time tam”) 37 60
Rise Time tr VDD = 10 V, RL = 10 Q 66 100
Turn-Off Delay Time td(off) ID _ 1 A, VGEN = 4.5 V, RG = 6 g 56 100 ns
Fall Time tf 57 100
Source-Drain Reverse Recovery Time trr IF = 1.0 A, dildt = 100 Alps 26 70
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70177
S-49534-Rev. E, 06-Oct-97
VISHAY Si6946DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20 l l
T = -55''C
C 125°C
VGS = 8 thru 3 V
16 16 's,
A A 25''C
E 12 E 12
5 2 V 8
Es 8 Es 8
- 4 - 4
0 2 4 6 8 10 0 1 2 3 4
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 1500
A 1200
Cl 0.15
fsi. 'l, 900
E 0.10 2‘3
I VGS = 2.5 V Ch
6 8 600
J) 0.05 VGS = 4.5 v -
f? 300
0 2 4 6 8 10 0 2 4 6 8 10 12
ID - Drain Current (A) Vros - Drain-to-Source Voltage (V)
5 Gate Charge 2 0 On-Resistance vs. Junction Temperature
1 . l I l
Vos=10V VGS=4.5V
ID=2.8A / kos=2.8A
E 4 A 1.6
8 /'" Cl //
j,' 3 / 8 G" 1 2 4/
a) 9 cu /
Lo ‘2 u /
8 g E -''"
U.) I? g w,,.-'"''"
ii'; 2 I 6 'l 0.8 ,1
U, 1 8 0.4
0 4 8 12 16 20 -50 -25 O 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70177 www.vishay.com . FaxBack 408-970-5600
S-49534-Rev. E, 06-Oct-97
Si6946DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.10
A ct (
E 10 8 0.08
'll g \
6' g-,'
5 /ls' o 07 'NSS
I L o 06 \
U) E =
- ii ID 2.8 A
" 0.05
1 0.04
th00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1 0 25 N
U "'ss g
(I,--', 0.0 _ ID = 250 0A t, )
il "'"'''''ss.s. t l
g., "ss. EL 10
8 "s. N
> -0.5 's,
5 "ss,
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 1O 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
-ly-1 _
1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 125°CIW
3. To, - TA = PDMZmJAm
4. Surface Mounted
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 1o-1 1 10 30
Square Wave Pulse Duration (sec)
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