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SI6943BDQ
Dual P-Channel 2.5-V (G-S) MOSFET
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VISHAY
New Product
Si6943BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.08 @ I/ss = M.5 v -2.5
-12 0.105@VGs=-2.5V -1.9
TSSOP-8
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31 I: Si6943BDQ El S2
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G1 IE Cs] G2
Top Jew
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V95 -12
Gate-Source Voltage N/ss i 8 V
TA=25°C -2.5 -2.3
Continuous Drain Current (To = 150°C)3 TA = 70°C ID -2.2 -1.8
Pulsed Drain Current (10 us Pulse VWdth) IBM -20 A
Continuous Source Current (Diode Conduction)" Is -1.0 -0.7
TA=25°C 1.10 0.80
Maximum Power Dissipation" TA = 70°C Po 0.70 0.50 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 89 110
Maximum Junction-to-Ambienta Steady State RNA 120 150 ''C/1N
Maximum Junction-to-Foot (Drain) Steady State RthJF 7O 90
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 72016
S-21780-Rev. A, 07-Oct-02
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Si6943BDQ
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS tTa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = Veg, b = -250 “A -0.45 -0.8 V
Gate-Body Leakage less Vos = 0 V, VGS = i8 V l 100 nA
Vros = -9.6 v, VGS = o v -l
Zero Gate Voltage Drain Current IDSS WA
VDS = -9.6 V, VGS = 0 V, To = 70°C -5
On-State Drain Currenta Imon) Vos -5 V, VGS = -4.5 V -10 A
VGS = -4.5 V, ID = -2.5 A 0.06 0.08
Drain-Source On-State Resistancea rros(on) Q
VGS = -2.5 V, ID = -1.9 A 0.08 0.105
Forward Transconductancea 9ts Vos = -15 V, ID = -2.5 A 8 S
Diode Forward Voltage3 VSD ls = -1.0 A, VGS = 0 V -O.75 -1.2
Dynamicb
Total Gate Charge Q9 5.7 10
Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -2.5 A 0.8 nC
Gate-Drain Charge di 1.6
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = -6 V, RL = 6 Q 35 60
Turn-Off Delay Time two In E -1.0 A, VGEN = -4.5 V, Re = 6 Q 35 60 ns
Fall Time tr 30 50
Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 Alps 30 6O
a. Pulsetest; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
2"! - r) 20 1 l 1 I
VGS=5thru3.5V ff, ve''''"'"" Tc|=-55°C vg(/)/
16 / / 16 25°C\/ y
A 2.5V A )Zz,
v a..--'"'"" V
E 12 / E 12 y
s /''" 's
E 8 2V7 E 8
I se'''"""" '
o ty'''' D
_ 4 - 4
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com Document Number: 72016
2 S-21780-Rev, A, 07-Oct-02
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VISHAY
Si6943BDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15 I
fit 0.12 o//
o /''"
- VGS = 2.5 V
if,, 0 09 m,.,,,,,,--"'"
0.: -------"''"
8 VGS = 4.5 v
' 0.06
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
VDS = 6 V
s. ID = 2.5 A
8, 4 I
0.0 1.3 2.6 3.9 5.2 6.5
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
Is - Source Current (A)
0.0 0.3 0.6 0.9 1.2 1.5
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
'ss. Ciss
400 iirl N,
0 2 4 6 8 10 12
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 4.5 V
ID = 2.5 A
1.2 ,,,,w''''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.12 ( ID = 2 5 A
0.08 l
Ns,,,,,.
0 1 2 3 4 5 6 7 8
VGS - Gate-to-Source Voltage (V)
Document Number: 72016
S-2178(r-Rev. A, 07-Oct-02
www.vishay.com
Si6943BDQ
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 60
i) ID = 250 WA / 36
g 0.0 b'
i?," -,--''" 24
-0.2 N
hunu..“‘
-0.4 0
-50 -25 0 25 50 75 100 125 150 10- 3 10- 2 10-1 1 10
To - Temperature (°C) Time (sec)
100 Safe Operating Area, Junction-to-Case
10 Limited
by rDS(on)
ID - Drain Current (A)
TC = 25°C 10 s
Single Pulse df
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ll' Duty Cycle = 0.5
2' E Notes:
33 E 0.1 -T-
T7 E 0 1 PDM
CD CD . k
(-i', E 0.05
g 1 t2 t
a 0.02 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 120°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72016
4 S-21780-Rev, A, 07-Oct-02
“3% Si6943BDQ
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 72016 www.vishay.com
S-2178(r-Rev. A, 07-Oct-02 5
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