SI6933DQ ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –3.5 A, –30 V, R = 45 mΩ @ V = –10 V. ..
SI6933DQ ,Dual 30V P-Channel PowerTrench MOSFET FaxBack 408-970-5600S–49538—Rev. C, 06-Oct-972-3V – Gate-to-Source Voltage (V) r – On-Resistan ..
SI6933DQ ,Dual 30V P-Channel PowerTrench MOSFET FaxBack 408-970-5600S–49538—Rev. C, 06-Oct-972-1Si6933DQVishay Siliconix
SI6933DQ
Dual 30V P-Channel PowerTrench MOSFET
VISHAY
Si6933DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY 't 1tetf'J's'it
VDs (V) rosmn) (C2) ID (A) 90‘“
0.045@VGs=-101/ $3.5
0.085@VGs=-45V i205
TSSOP-8
D1 [I o E] De G1 'T G2 'T
SI II Si6933DQ Z] S2
S, IE Cisl S2
G1 [Z Es] G2
Top View
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V95 -30
Gate-Source Voltage VGS ce20
TA = 25°C i 3.5
Continuous Drain Current (To = 150"C)a ID
TA = 70°C ck 2.8
Pulsed Drain Current IDM :20
Continuous Source Current (Diode Conduction)" ls -C25
TA = 25°C 1_0
Maximum Power Dissipation' PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 "C/W
a. Surface Mounted on FR4 Board! s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70640
S-49538-Rev. C, 06-Oct-97
www.vishay.com . FaxBack 408-970-5600
Si6933DQ
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 0A -1.0 V
Gate-Body Leakage ksss VDS = 0 V, VGS = l 20 V i 100 nA
Vos = -30 v, VGS = 0 v -1
Zero Gate Voltage Drain Current bss WA
VDs=-30V,VGs=0V,To=550C -25
On-State Drain Currents Iro(on) Vros 2 -5 V, VGs = -10 V -1 5 A
VGS = -10 v, ID = 3.5 A 0.035 0.045
Drain-Source On-State Resistance" rDS(on) Q
N/ss = -4.5 V, ID = 2.5 A 0.062 0.085
Forward Transconductancea gfs VDS = -15 V, ID = -3.5 A 7.2 S
Diode Forward Voltagea VSD ls = -1.25 A, VGS = 0 V -0.77 -1.2
Dynamicb
Total Gate Charge Q9 17 30
Gate-Source Charge Qgs VDS = -1 5 V, VGS = -10 V, ID = -3.5 A 4.4 nC
Gate-Drain Charge di 3.1
Turn-On Delay Time td(on) 13 20
Rise Time tr VDD = -15 V, RL = 15 Q 10 20
Turn-Off Delay Time tam ID E -1 A, VGEN = -10 v. Rs = 6 Q 33 60 ns
Fall Time tt 10 20
Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 NPs 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s: 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70640
S-49538-Rev. C, 06-Oct-97
VISHAY Si6933DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
Kas =10thru 5 v
'g 4 v i
‘5' 12 ,7 "'t' 12
E 8 E 8
t2 0 TC = 125°C
4 3 v - 4 25"C (
0 2 4 6 8 10 0 1 2 3 4 5
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 1500
Nc, Ciss
A 0.16 1200 am..-,
m 0.12 8 900
0 0.08 VGS = 45 V - o 600
I m,..,..,--''" I
iir ------""""'" ' VGS = 10 V O Coss
f? 0.04 300 'tui:.:.:, \-
0 4 8 12 16 20 O 6 12 18 24 30
ID - Drain Current (A) l/ns - Drain-to-Source Voltage(V)
10 Gate Charge 1 8 On-Resistance vs. Junction Temperature
l . l l l
VDS=15V pr VGS=10V
ID=3.5A 1.6- ID=3.5A
g a A ',,,,,,w'''''
a) /'" Cl l
U: 1.4
:2 / 8 /
i; 6 g g 1 2
Lo /'''" E S .
O ID W
is, 4 I é F, 1.0
d; I o ?5
(D y// e 0.8
8 2 sf:f'
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70640
www.vishay.com . FaxBack 408-970-5600
S-49538-Rev. C, 06-Oct-97
Si6933DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
10 A 0.16
E T J = 150°C 8
'll fsi. 0.12
8 Cl 0.08 l
m "ii" 'cs,,,,,,,. ID = 3.5 A
- :3 0.04 .---,
th00 0.25 0.50 J75 1.00 1.25 1.50 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
O 6 I (
A 0.4 ID = 250 yA
, 0.2 / E (
(I,--', " ii" 20
il -0.0 t )
> -0 2 N
',.,e''''' 10
-0 4 's,
-0.6 0
-50 -25 0 25 50 75 100 125 150 th01 0.1 1 10 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.1 -T-
Thermal Impedance
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 125°CIW
3. To, - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
Normalized Effective Transient
10-4 10-3 10-2 1o-1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70640
2-4 S-49538-Rev. C, 06-Oct-97
:
www.loq.com
.
