SI6925DQ ,20-V (D-S) Dual FaxBack 408-970-5600S-49455—Rev. A, 17-Dec-962-1Si6925DQVishay Siliconix
SI6925DQ
20-V (D-S) Dual
VISHAY
Si6925DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) In (A)
0.05@VGs=4.5V $3.4
20 0.06@VGs= 3.0V i3.1
0.08@VGs=2.5V 32.?
TSSOP-8
D1 q E D2
SI IE Si6925DQ CEI S2 G, oJ
S, Cisl S2
G1 Csl G2
Top View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage VGS d: 12
TA = 25°C i 3.4
Continuous Drain Current (TJ = 150l)a ID
TA = 70°C d: 2.7
Pulsed Drain Current (10 us Pulse VWdth) IDM d: 30
Continuous Source Current (Diode Conduction)a ls 1.25
TA = 25°C 1
Maximum Power Dissipation" PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range To, Tsta -55 to 150 "'C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 'CA/V
a. Surface Mounted on FR4 Board! s 10 sec.
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DocumentNumber: 70631
S-49455-Rev. A, 17-Dec-96
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Si6925DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGs, ID = 250 WA 0.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = l 12 V l 100 nA
Zero Gate Voltage Drain Current lrss Vos = 20 V, VGS = 0 V 1 WA
VDs=16V,Vss=0V,To=700C 5
On-State Drain Currentb IBM) VDS 2 5 V, VGS = 4.5 V 10 A
Vss = 4.5 v, ID = 3.4 A 0.038 0.05
Drain-Source On-State Resistanceb roswn) VGS = 3.0 V, ID = 3.1 A 0.044 0.07 Q
N/ss = 2.5 v, ID = 2.7 A 0.048 0.08
Forward Transconductanceb gfs Vos = 10 V, ID = 3.4 A 18 S
Diode Forward Voltageb VSD ls = 1.25 A, VGS = 0 V 0.7 1.2
Dynamic"
Total Gate Charge Q9 7.5 15
Gate-Source Charge Qgs Vos = 6 V, N/ss = 4.5 V, ID = 3.4 A 1.2 nC
Gate-Drain Charge di 1.8
Turn-On Delay Time tdmn) 10 20
Rise Time tr VDD = 6 V, RL = 6 Q 25 50
Turn-Off Delay Tlme tdwm '0 E 1 A, VGEN = 4.5 V, RG = 6 Q 40 60 ns
Fall Time If 10 20
Source-Drain Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 Alps 50 90
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 3 300 us, duty cycle s: 2%.
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2-2 S-49455-Rev. A, 17-Dec-96
Si6925DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
/ VGS = 5 thru 3 v /
24 y f 24 To = -55u? A /
y/ 'e'"''" 2.51/ l J7
Cir" / f? Cir" 25''C fl
E 18 l, E 18 I
t / 2 V ta 125°C
(i, 12 r g 12
- 6 f/ 1.5V - - 6
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V93 - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 1200
VGS = 2.5 V l
A 0.08
ii,; VGS = 3 V (1:l"
I 0 06 ID Ciss
ii'; m,.....,,,,,,,,,---"-'"'" g I
tD --.----""" ---- 15 600
5 ------"- n....---''''''""" g
o 0.04 8
Is VGS = 4.5 v I I
sri?.. O 300 \ Cass
tels 0.02 "'"s.
0 6 12 18 24 30 0 4 8 12 16 20
ID - Drain Current(A) VDs - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
4.5 1.8
VDS=10V 16_VGS=4,5V /
3.6 - ID=3.4A I . ID=3.4A s,,,,?
1.8 / 1.2 s,,,,,,,,,,,,?'"
1.0 ow'''''
0.9 v/'"
0.8 o,,,,,,,,,,,"'''''''"
rDS(on)— On—Resistance( Q )
(Normalized)
VGs — Gate-to-Source Voltage (V)
0 2 4 6 8 -50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70631 www.vishay.c0m . FaxBack 408-970-5600
S-49455-Rev. A, 17-Dec-96 2-3
Si6925DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| s — Source Current (A)
VGS(th)Variance (V)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ=1so°c
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 pA
Ah10 Nc
Ah26 "sis,,,,
-50 0 50 100 150
TJ - Temperature (°C)
rDS(on)— On-Resistance( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = 3.4 A
0.06 'ss,
0.04 "''ts-
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 10 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
1 0-4 1 0-3 1 0-2
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 125''CAN
3. TJM - TA = PDMZthoA(t)
4. Surface Mounted
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Document Number: 70631
S-49455-Rev. A, 17-Dec-96
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