SI6925ADQ ,Dual N-Channel 2.5-V (G-S) MOSFETS-32515—Rev. A, 08-Dec-031Si6925ADQNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI6925DQ ,20-V (D-S) Dual FaxBack 408-970-5600S-49455—Rev. A, 17-Dec-962-1Si6925DQVishay Siliconix
SI6925ADQ
Dual N-Channel 2.5-V (G-S) MOSFET
“3% Si6925ADQ
New Product Vishay Siliconix
Dual N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.045 © Ves = 4.5 V 3.9
20 0.055 @ VGS = 3.0 V 3.5
0.065 @ VGS = 2.5 v 3.0
TSSOP-8
D1 I: q El D2
S1 '2 :l S2 G1 oJ G2 OJ
SI IE El S2
G1 E El G2
Top Mew
Ordering Information: Si6925ADQ-T1 S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage 1/ss d: 12
TA = 25°C 3.9 3,3
Continuous Drain Current (T J = 150°C)El ID
TA = 70°C 3.1 2.6
Pulsed Drain Current (10 us Pulse Width) IBM 30
Continuous Source Current (Diode Conduction)a ls 1.0 0.72
TA=25°C 1.13 0.80
Maximum Power Dissipation" PD W
TA = 70"C 0.72 0.51
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 186 110
Maximum Junction-to-Ambient' RNA
Steady State 125 155 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rms: 65 85
a. Surface Mounted on FR4 Board, t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72623 www.vishay.com
S-32515-Rev. A, 08-Dec-03 1
- IE=7'"
SI6925ADQ VISHAY
Vishay Siliconix New Product
SPECIFICATIONS tTo = 25° C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = Was, ID = 250 0A 0.6 1 .8 V
Gate-Body Leakage IGSS Vos = O V, VGS = i 12 V i 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current loss 11A
VDS=20\/,VGS=OV,TJ=70°C 15
On-State Drain Currentb Iroton) V03 2 5 V, VGS = 4.5 V 10 A
VGS = 4.5 V, ID = 3.9 A 0.035 0.045
Drain-Source On-State Resistanceb r039,” VGS = 3.0 v, ID = 3.5A 0.042 0.055 Q
VGS = 2.5 V, ID = 3.0 A 0.050 0.065
Forward Transconductanceb gfs VDS = 10 V, ID = 3.9 A 14 S
Diode Forward 1/oltageh VSD ls = 1.0 A, VGS = 0 V 0.75 1.1 V
Dynamica
Total Gate Charge 09 4.0 6
Gate-Source Charge Qgs Vos = 6 V, VGS = 4.5 V, ID = 3.9 A 0.9 nC
Gate-Drain Charge di 1.0
Gate Resistance Rg 1.9 Q
Turn-On Delay Time td(on) 40 60
Rise Time tr VDD = 6 V, RL = 6 Q 50 75
Turn-Off Delay Time td(off) lo E 1 A,VGEN = 4.5 V, R9 = 6 Q 20 30 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 Alps 20 40
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 ps, duty cycle s: 2%.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 _ I 30 f
VGS = 5 thru 3.5 V ///
25 25 I
-_ av //
Ct.] 20 , g:.] 20 l
5 15 5 15
E 2.5 v I'
I 10 I 10
Cl (//" D To = 125°C
5 5 L500!
2 v‘ l \ -55oC
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage M
www.vishay.com Document Number: 72623
2 S-32515-Rev. A, 08-Dec-03
VISHAY
Si6925ADQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 2.5 V
0.06 / Vss = 3y!
'Dsmm — On-Resistance ( g2)
a,,,.-'''" VGS = 4.5 V
0.04 -
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate Charge
VDS=6V o,,PP''''
5 - 10:3.9A
w'''''"
VGS — Gate-to-Source Voltage (V)
0 1 2 3 4 5
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
| S — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) - On-Resistance (9)
(Normalized)
rDS(0n) — On-Resistance (Q)
Capacitance
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
vss = 4.5 V
ID = 3.9 A ,,,,,,w'''
1.4 w'"
0.8 4/
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.05 N.
ID = 3.9A
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 72623
S-32515-Rev. A, 08-Dec-03
www.vishay.com
Si6925ADQ
Vishay Siliconix New Product
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 100
0.2 80 (
ID = 250 WA
VGS(th) Variance (V)
Power (W)
's, 40 l
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10
TJ - Temperature (°C) Time (sec)
Safe Operating Area, Junction-to-Case
IDM Limited
Limited
10 by r03(on)
|D(on)
Limited
In — Drain Current (A)
0.1 TA = 25°C
Single Pulse
BV Limited
0.01 DSS I I
0.1 1 10 100
VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.L: _
0.02 1. Duty Cycle, D = T
2. Per Unit Base = Rth0A =125°CNV
Single Pulse 3, TJM - TA = ProMZthuAit)
4. Surface Mounted
Thermal Impedance
Normalized Effective Transient
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72623
4 S-32515-Rev. A, 08-Dec-03
“3% Si6925ADQ
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Ie Pulse
ltr' 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 72623 www.vishay.com
S-32515-Rev. A, 08-Dec-03 5
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