SI6923DQ ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeApplications low R DS(ON)• DC/DC conversion • Low profile TSSOP-8 package 5 46 37 28 1TSSOP-8 Pin ..
SI6923DQ ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode FaxBack 408-970-5600S-56941—Rev. B, 02-Nov-982-1Si6923DQNew ProductVishay Siliconix
SI6923DQ
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
Si6923DQ A G A S A S D C April 2001 Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.075 Ω @ V = –2.5 V DS(ON) GS PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the • V < 0.55 V @ 1 A MOSFET, providing a compact power solution for F asynchronous DC/DC converter applications. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC conversion • Low profile TSSOP-8 package 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o MOSFET Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1) A D –3.5 – Pulsed –30 MOSFET Power Dissipation (minimum pad) (Note 1) 1.2 P W D Schottky Power Dissipation (minimum pad) (Note 1) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Schottky Maximum Ratings V Repetitive Peak Reverse Voltage 20 V RRM I Average Forward Current 1.5 A F IFM Peak Forward Current 30 A Thermal Characteristics R Thermal Resistance, Junction-to-Ambient MOSFET: 115 °C/W θJA (minimum pad) (Note 1) Schottky: 130 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6923 Si6923DQ 13’’ 16mm 3000 units Si6923DQ Rev. A(W) 2001
