SI6866DQ ,Dual N-Channel 2.5-V (G-S) MOSFET FaxBack 408-970-5600S-99422—Rev. A, 29-Nov-992-1Si6866DQNew ProductVishay Siliconix
SI6866DQ
Dual N-Channel 2.5-V (G-S) MOSFET
VISHAY
Si6866DQ
New Product
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A)
20 0.030 @ VGS = 4.5 v i5.8
0.040 @ VGS = 2.5 v i5.0
TSSOP-8
S1 3] D
G1 LE Si6866DQ CEI D G1 0A
S2 E D
G2 Csl
Top View
N-Channel MOSFET
t32o-l
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 20 V
Gate-Source Voltage VGS l 12
. . TA=25°C $5.8 i5.0
Continuous Drain Current (TJ = 150"C)a ID
TA=70°C 14.7 14.0 A
Pulsed Drain Current (10 us Pulse Width) IDM i 30
Continuous Source Current (Diode Conduction)" ls 1.5 1.1
TA=25°C 1.67 1.2
Maximum Power Dissipationa PD W
TA = 70°C 1.06 0.76
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 60 75
Maximum Junction-to-Ambient" RthJA
Steady State 86 105 °CNV
Maximum Junction-to-Foot Steady State RthJF 38 45
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71102
S-99422-Reu A, 29-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si6866DQ
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = l 12 V i 100 nA
VDs=16V,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
Vros=16V,Vss--0V,Tu=85oC 25
On-State Drain Current3 IMO") Vos 2 5 V, VGS = 4.5 v 30 A
Drain-Source On-State Resistances rDS(on) VGS = 4.5 V, ID = 5.8 A 0.023 0.030 Q
sz = 2.5 v, ID = 5.0 A 0.033 0.040
Forward Transconductancea gfs Vos = 10 V, ID = 5.8 A 18 S
Diode Forward Voltagea VSD ls = 1.5 A, VGS = O V 0.75 1.1
Dynamic"
Total Gate Charge Q9 11 15
Gate-Source Charge Qgs Vos = 10 V, VGS = 4.5 V, ID = 5.8 A 2.4 nC
Gate-Drain Charge ' 2.4
Turn-On Delay Time td(on) 17 25
Rise Tlme tr VDD = 10 V, RL = 10 Q 37 50
Turn-Ott Delay Time td(off) ID _ 1 A, VGEN = 4.5 V, RG = 6 Q 41 55 ns
Fall Time tf 24 35
Source-Drain Reverse Recovery Time trr IF = 1.5 A, di/dt = 100 Alys 3O 4O
a. Pulsetest; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS=5thru3V
Ci.:.". 2.5V
o 2 4 8 10
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
TC T"""
25''C \7/
2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71102
S-99422-Rev. A, 29-Nov-99
VISHAY
New Product
Si6866DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.08
g 0.06
8 Vss = 2.5 v
0.04 7
E" m........---'''""
$3; VGS = 4.5 V
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
v03 =10 v
E ID = 5.8 A /
8, 3.6 l
csz:,a' . I
ifi 1.8 f-
0 3 6 9 12
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T: =150°c
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Capacitance
,y.1.S 1200 _
400 Q Coss
O 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGS = 4.5 V
A ID = 5.8 A
Cl 1.4
3,1) , 1.2
f w,,,.'"
0.8 /l
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
'ii.'. (h08
E 006 ID = 5.8 A
I 0.04
:5: Nssss,
.9 0.02
0 2 4 6 8
l/ss - Gate-to-Source Voltage (V)
Document Number: 71102
S-99422-Reu A, 29-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si6866DQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 32
(h2 \ 24
"s, ID=25OuA
Power (W)
VGS(th) Variance (V)
-0.2 \
'ss,,,,,,,, N,
-0.4 N. "N,
-0.6 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E I
E t1 _
ly, -ly-1 ta
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 86°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
g E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71102
b4 S-99422-Rev. A, 29-Nov-99
:
www.loq.com
.
