SI6820DQ ,N-Ch, Reduced Qg, Fast Switching MOSFET + Schottky Diode FaxBack 408-970-5600S-56936—Rev. C, 23-Nov-982-1Si6820DQVishay Siliconix
SI6820DQ
N-Ch, Reduced Qg, Fast Switching MOSFET + Schottky Diode
VISHAY
Si6820DQ
N-Channel, Reduced Qg, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0.160@VGS=4.5V i1.9
0.260@VGS= 3.0V i1.5
SCHOTTKY PRODUCT SUMMARY
Vishay Siliconix
_ VF (v)
VKA (V) Diode Forward Voltage IF (A)
20 0.5 V @ 1 A 1.5
TSSOP-8
D E . 31 K G 'T
s LE Si6820DQ CEI A
S [E E! A
G E El
Top Vlew S A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) VDS 20
Reverse Voltage (Schottky) VKA 20 v
Gate-Source Voltage (MOSFET) VGS i 12
TA = 25°C l IS
Continuous Drain Current (TJ = 150°C) (MOSFET)' b ID
TA = 70°C i1.5
Pulsed Drain Current (MOSFET) IDM i 8 A
Continuous Source Current (MOSFET Diode Conduction)' b ls 1.0
Average Foward Current (Schottky) IF 1.5
Pulsed Foward Current (Schottky) IFM 3O
TA = 25°C 1.2
Maximum Power Dissipation (MOSFET?! b
TA = 70°C 0.76
' . . . TA = 25°C 1.0
Maximum Power Dissipation (Schottky)' b
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 105
Maximum Junction-to-Ambient (t s 10 seep
Schottky 125
RthJA c'CIW
MOSFET 115
Maximum Junction-to-Ambient (t = steady state)a
Schottky 130
a. Surface Mounted on FR4 Board,
b. t s 10 sec.
Document Number: 70790
S-56936-Reu C, 23-Nov-98
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Si6820DQ
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGs, ID = 250 [1A 0.6 V
Gate-Body Leakage less VDS = 0 V, VGS = i12 V i 100 nA
VDs=20V,Vss=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=20V,VGS=0V,TJ=55°C 25
On-State Drain Currenta low") V03 2 5 V, VGs = 4.5 V 6 A
VGS=4.5V,ID=1.9A 0.085 0.160
Drain-Source On-State Resistance" rDS(on) Q
VGs=3-0 V, ID: 1.5A 0.115 0.260
Forward Transconductancea gts VDs = 15 V, ID = 1.9 A 5 S
Diode Forward Voltagea VSD Is = 1.0 A, VGS = 0 V 0.77 1.2
Dynamicb
Total Gate Charge Q9 2.1 3.5
Gate-Source Charge Qgs VDS = 3.5 V, VGS = 4.5 V, ID = 0.3 A 0.43 nC
Gate-Drain Charge di 0.30
Turn-On Delay Time td(on) 8 20
Rise Time tr VDD = 3.5 V, RL =11.5 Q 10 20
Turn-Off Delay Time tu(ott) ID _ 0.3 A, VGEN = 4.5 V, Rs = 6 Q 12 25 ns
Fall Time tf 6 15
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 Alys 31 60
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTI'KY SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = IA 0.45 0.50
Forward Voltage Drop VF V
IF =1A,TJ = 125°C 0.36 0.42
v, = 20 V 0.003 0.100
Maximum Reverse Leakage Current lrm v, = 20 V, TJ = 75°C 0.1 1 mA
1/r--20V,To--125oC 2 10
Junction Capacitance CT v, = 10 V 62 pF
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Document Number: 70790
S-56936-Rev. C, 23-Nov-98
VISHAY
Si6820DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
VGS - 5 thru 3,5 V
<3 2.5 v
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.16
F, VGS = 3.0 V
.1rd 0.12
é VGS = 4.5 V
('3 0.08
" 0.04
0 2 4 6 8
ID - Drain Current (A)
5 Gate Charge
9 Vos = 3.5 v ,,,,/'''"
G" 4 - ID = 0.3 A /
, ,,,,,/''''"
9.3 3 l
g ,,,,/''''"
0 0.5 1.0 1.5 2.0 2.5
Qg - Total Gate Charge (nC)
rnsmn) — On—Resistance( Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = 125°C
25 c I -55''C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Capacitance
"ss, Coss
"ss-s.........,,..
l Crss
0 4 a 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 1.9 A
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70790
S-56936-Reu C, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si6820DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
If: ii,;
'll :2
6' T J = 150"C ii'
'le' 5
0.2 0.4 0.6 0.8 1.0 1.8
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.50 l l
ID = 250 11A
ID "s,
ie' "s, '
J) o 00 g
Sc. n.
?if "s,
-C25 's,
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
MOSFET
On-Resistance vs. Gate-to-Source Voltage
ID = 1.9 A
0.1 "s..,
---.-,
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 IO 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 1O-3 10-2 ltr-l
Notes:
1. Duty Cycle, D =
2. Per Unit Base = RthJA =115°CNV
3. TOM - TA = PDMZthJAm
4. Surface Mounted
Square Wave Pulse Duration (sec)
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Document Number: 70790
S-56936-Rev. C, 23-Nov-98
Si6820DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
g 1 'it
o 0 1 o
0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6
TJ - Junction TemperatureCC) VF - Forward Voltage Drop(\/)
Capacitance
C" 200
15 150
8 Ciss
lg" 'N
7 "s-ss.,,.......,
0 4 8 12 16 20
VKA - Reverse Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
1. Duty Cycle, D = T
2. Per Unit Base = RNA =130°CNV
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PDMirtruA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 70790 www.vishay.com . FaxBack 408-970-5600
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