SI6562DQ ,N/P-Channel 20-V (D-S) FaxBack 408-970-5600S-56944—Rev. B, 23-Nov-982-1Si6562DQVishay Siliconix
SI6562DQ
N/P-Channel 20-V (D-S)
VISHAY
Si6562DQ
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.030@VGS=4.5V 14.5
N-Channel 20
0.04O@VGS=2.5V i3.9
0.050@VGs=-45V 13.5
P-Channel -20
0.085@ VGS ---t5V i2]
TSSOP-8
D1 q E] D2
SI LEi Si6562DQ CEI S2 G1 OJ
S, Cisl S2
G1 Csl G2
Top View
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS l 12 ck 12
TA-- 25°C $4.5 $3.5
Continuous Drain Current (T J = 150°C)6 b
TA-- 70°C i3.6 12.7
Pulsed Drain Current IDM d: 30 i 30
Continuous Source Current (Diode Conduction)a ls 1225 -1.25
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 125 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70720
S-56944-Rev. B, 23-Nov-98
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Si6562DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Was, ID = 250 MA N-Ch 0.6
Gate Threshold Voltage l/SSM) V
VDS = Kss, ID = -250 “A P-Ch AJ.6
N-Ch d: 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = ck 12 V nA
P-Ch d: 100
Vos = 20 V, VGs = 0 V N-Ch 1
VDs = -20 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS WA
Vos = 20 V, VGS = 0 V, TJ = 55°C N-Ch 25
Vos = -20 V, VGS = O V, T: = 55°C P-Ch -25
V03 2 5 V, VGS = 4.5 V N-Ch 30
On-State Drain Currenta 'D(on) A
Vos 2 -5 V, VGS = -45 V P-Ch -30
VGS = 4.5 V, ID = 4.5 A N-Ch 0.023 0.030
. . Vss = -4.5 V, ID = -3.5 A P-Ch 0.040 0.050
Drain-Source On-State Resistancea ’DS(on) Q
VGS = 2.5 V, ID = 3.9 A N-Ch 0.030 0.040
VGs = -2.5 V, ID = -2.7 A P-Ch 0.060 0.085
vDS = 10 V, ID = 4.5 A N-Ch 20
Forward Transconductancea gts S
VDs=-10V, ID=-3.5A P-Ch 10
ls = 1.25 A, VGS = o v N-Ch 0.65 1.2
Diode Forward Voltagea VSD V
ls = -1.25 A, l/ss = 0 V P-Ch 0.72 -1.2
Dynamic''
N-Ch 13 25
Total Gate Charge 09
N-Channel P-Ch 14.5 25
VDS = 15 V, VGS = 4.5 V, ID = 4.5 A N-Ch 3.0
Gate-Source Charge Qgs nC
P-Channel P-Ch 3.5
VDs=-15V, VGS---4.5 V, ID=-3.5A N-Ch 3.3
Gate-Drain Charge di
P-Ch 3.5
N-Ch 22 50
Turn-On Delay Time td(on)
P-Ch 27 50
N-Channel
N-Ch 40 80
Rise Time tr VDD =10 V, RL =10 Q
ID _ 1A1VGEN =1OV,RG = 6 Q P-Ch 30 60
T Off D I T t P-Channel N-Ch 50 100
urn- e ay Ime d = - = ns
(oft) - VDD 10V,RL 10 Q- P-Ch 57 100
ID = -1A,VGEN---10V, Rs=60
N-Ch 20 40
Fall Time tf
P-Ch 21 40
Source-Drain t IF = 1.25 A, di/dt = 100 Alus N-Ch 30 60
Reverse Recovery Time rr IF = -1.25 A, di/dt = 100 Alps P-Ch 60 100
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-56944-Rev. B, 23-Nov-98
VISHAY
Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Output Characteristics
30 ' .
VGS = 5 thru 3 v I
'5 12 -
0 2 4 6 8 10
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Ct 0.06
m 0.04 - VGS - 2.5V
5 _...,,...,---'"
A VGS - 4.5 v
a 0.02
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
Vos = 10 v y''
g 3.6 - ID = 4.5 A
Jil 2.7 /
‘5 s,,p''"
s,'. 1.8
u) 0.9
O 3 6 9 12 15
Q9 - Total Gate Charge(nC)
FDS(on)— On-Resistance (
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
l -55''C
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 - VGS=4.5V
lro=4.5A
1.4 '/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70720
S-56944-Rev. B, 23-Nov-98
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Si6562DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.10
A 0.08
A 10 Ct ID = 4.5 A
g o5. 0.06
25 (l)
o o IF,
5 Tu = 150 C '
08) 6 0.04
(I) Sr,
- 5 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l I 40
ID = 250 0A \
0.2 Nc 32
2; -0.0 24
il, "s, ,
E -0.2 i g 16
a 'ss,
> "ss, \
-0 4 tc 8 _
's, "ss
'ss.,.
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
IO-A 10-3 1ty-2 Ity-l
Square Wave Pulse Duration (sec)
Notes:
-5 " l--
- t2 - t1
l. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 125°CNV
3. TJM - TA = PDMZIhJAm
4, Surface Mounted
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Document Number: 70720
S-56944-Rev. B, 23-Nov-98
VISHAY
Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
24 Ycs-- 5, 4.5, 4, 3,5V
I D — Drain Current (A)
0 2 4 6 8 10
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.16
g 0.12 VGs=2.5V
8 0.08 g], Ves-45V
gi _,........,,,,----''''"
9 0.04
0 6 12 18 24 30
ID - Drain Current(A)
Gate Charge
Vrss = 10 V
Ci? 3.6 - ID=3.5A
a, 2.7
f) 1.8 I
<0 0.9
O 3 6 9 12 15
Q9 - Total Gate Charge(nC)
rDS(on)— On—Resistance( Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
P-CHANNEL
Transfer Characteristics
Tc = 125°C
251 Ist)' -55''C
0 Lay l
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1000 f
500 y 's-............ Coss
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 I l
1.6 - Vss=4.51/
ID=3.5A
1.2 o,,,W'''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70720
S-56944-Rev. B, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si6562DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A 0.16
E T J = 150°C 8
E o5. 0.12
J', 6 0.08
(I) sSi?. lo = 4.5 A
- h' 0.04
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
0 8 Threshold Voltage Single Pulse Power
- I l 40
0.6 ID = 250 0A
0.4 //
g 0 2 I g
a w.,-"''' a 20
?t., -0 o it
5 - E'
> -0 2 ,/ 10 N
-0.4 "ss
"s.,..
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 0-4 1 0-3 1 tt-2 1 o-I
Square Wave Pulse Duration (sec)
Notes:
_.L: _
I, Duty Cycle, D = T
2. Per Unit Base = RmJA =125°CIW
3. TJM - TA = PDMzthJAm
4. Surface Mounted
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Document Number: 70720
S-56944-Rev. B, 23-Nov-98
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