SI6544DQ ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-982-1Si6544DQVishay Siliconix
SI6544DQ
N/P-Channel 30-V (D-S) Pair
VISHAY
Si6544DQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A) «CV9
0.035@VGS=10V 14.0 iii,
N-Channel 30 m tts
0.050 @ sz = 4.5 v i3.4 “6 ists
P Ch 0.045@VGs=-10V 13.5 ttft ‘Vbo
- annel -30 ,tte
0.090 @ VGS = -4.5 v $25 po
TSSOP-8
D1 . E D2 G2 "T
SI IE Si6544DQ CEI S2 e1 OJ
S, E s,
G1 Csl G2
Top View
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS l 20 ck 20
TA-- 25°C $4.0 $3.5
Continuous Drain Current (T J = 150°C)6 b
TA-- 70°C i3.2 12.8
Pulsed Drain Current IDM d: 20 i 20
Continuous Source Current (Diode Conduction)a ls 125 -1.25
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 125 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70668
S-56944-Rev. C, 23-Nov-98
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Si6544DQ
Vishay Siliconix
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Was, ID = 250 MA N-Ch 1.0
Gate Threshold Voltage l/SSM) V
VDS = Kss, ID = -250 “A P-Ch -1.0
N-Ch d: 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = 1:20 V nA
P-Ch d: 100
Vos = 30 V, VGS = 0 V N-Ch 1
VDs = -30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS WA
Vos = 30 V, VGS = 0 V, TJ = 55°C N-Ch 5
VDs=-30 V,VGS=OV, T: = 55°C P-Ch -5
VDS 2 5 V, VGs = 10 V N-Ch 20
On-State Drain Currenta ID(on) A
VDS 2 -5 V, VGS = -1 0 V P-Ch -20
Vss = 10 V, ID = 4.0 A N-Ch 0.027 0.035
. . VGS = -10 V, ID = -3.5 A P-Ch 0.035 0.045
Drain-Source On-State Resistancea ’DS(on) Q
VGS = 4.5 V, ID = 3.4 A N-Ch 0.038 0.050
Vss = -4.5 V, ID = -2.5 A P-Ch 0.062 0.090
VDS=15V,|D=4.OA N-Ch 13
Forward Transconductancea gts S
VDs=-15V, ID=-3.5A P-Ch 7.2
ls = 1.25 A, VGS = o v N-Ch 0.73 1.2
Diode Forward Voltagea VSD V
ls = -1.25 A, l/ss = 0 V P-Ch -0.77 -1.2
Dynamic''
N-Ch 17.5 30
Total Gate Charge 09
N-Channel P-Ch 17 30
VDS= 15V, Vss=10V, |D=4.0A N-Ch 4.0
Gate-Source Charge Qgs nC
P-Channel P-Ch 4.4
VDs=-15V, VGs=-10V, ID=-3.5A N-Ch 2.5
Gate-Drain Charge di
P-Ch 3.1
N-Ch 12 20
Turn-On Delay Time td(on)
P-Ch 13 20
N-Channel
N-Ch 9 20
Rise Time tr VDD =15 V, RL =15 Q
ko-sl/tN/GEN-lol/HRS--) P-Ch 10 20
Turn Off Delay Time t P-Channel N-Ch 25 50 ns
- d = - =
(oft) - VDD 15\5,RL 15 Q- P-Ch 33 60
ID = -1A,VGEN---10V, Rs=60
N-Ch 20 40
Fall Time tf
P-Ch 10 20
Source-Drain t IF = 1.25 A, di/dt = 100 Alps N-Ch 25 60
Reverse Recovery Time rr IF = -1.25 A, di/dt = 100 Alps P-Ch 30 60
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-56944-Rev. C, 23-Nov-98
VISHAY
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
'tls" 8
g 0.04
i','' 0.03
L 0.02
'- 0.01
Output Characteristics
VGS =10thru 5V
0 2 4 6 8 10
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
- VGS=10V
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
VDs=15V
- |D=4.0A
0 4 8 12 16 20
Q9 - Total Gate Charge(nC)
FDS(on)— On-Resistance (
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
N-CHANNEL
Transfer Characteristics
Tc = 125°C //
25°C y
-55''C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
K Crss
0 6 12 18 24 30
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 - = 10 V "
ID = 4.0 A "
1.4 /'/
1.2 //
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70668
S-56944-Rev. C, 23-Nov-98
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Si6544DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.12
A 10 Ct 0.09 lro=4.0A
g /b' 0.06
sn J) 0.03 "mm-_,
0 0.2 0.4 0.6 0.8 1.0 1.2 1 3 5 7 9
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 l l 40
ID = 250 M \
0.3 'N. 32
ID 0.0 24
E -02 f? 16
-0.9 O
-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 0-4 1 0-3 1 0-2 1 o-I
Square Wave Pulse Duration (sec)
Notes:
_.| " _
- t2 - "
1. Duty Cycle, D = T
2. Per Unit Base = Rth0A = 125°CNV
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
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Document Number: 70668
S-56944-Rev. C, 23-Nov-98
Si6544DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
V = 10 to 5 V
16 GS 16
Ci:: 4 v Ci.:]
t; 12 --" ti 12
's 'r,
'tls" 8 'it" 8
Cl Cl Tc = 125°C
4 3 v - 4 25°C (,
l -55c'C
0 0 Ag l
0 2 4 6 8 10 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 1500
A 0.16 1200 -H-
0) cu.
m 0.12 o 900
5 O 08 V 4 5 V g 600
. GS = . - o
' "l.......,,.....---'''''" I C
sc.?, ---""" V = 10 V U 055
f? O 04 GS 300 \ '
F . Crss '"-"--_,
0 4 8 12 16 20 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
10 Gate Charge 1 8 On-Resistance vs. Junction Temperature
I . l l I
VDS=15V / VGS=1OV
ID=4.0A 1.6- ID=4.0A
E 8 A ',,,,,,w''''''
u) /" Ct I
CD 1.4
g / 8 "
i; 6 g e 2
9 25 g 1.
g 4 I I o 1.0
d; I o g
(f s.5 0.8
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
0g - Total Gate Charge (nC) To - Junction Temperature CC)
Document Number: 70668 www.vishay.com . FaxBack 408-970-5600
S-56944-Rev. C, 23-Nov-98 2-5
Si6544DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
10 A 0.16
E T J = 150°C 8
E fii. 0.12
b' 01 (
(3 o 0 08 l
m sfi?. ID = 4.0 A
- h' 0.04 "mm.--,
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
0.6 I (
0.4 ID = 250 WA
g 0.2 / E (
E " C' 20
.,"iz..] -0 0 E l,
S -0 2 / 10 N
e,,-'''" N.
-0 4 "ss
‘~---.
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
5 8 0.2
t i?,, Notes:
8 g PDM
E a 0.1 I
E E -ly-1 te t
g 1. Duty Cycle, D = T1
g 2. Per Unit Base = Rth0A = 125°CNV
3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 1tt-2 Ity-l 1 10 30
Square Wave Pulse Duration (sec)
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