SI6543DQ ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-49534—Rev. C, 06-Oct-972-1Si6543DQVishay Siliconix
SI6543DQ
N/P-Channel 30-V (D-S) Pair
VISHAY Si6543DQ
Vishay Siliconix
Dual N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.065@VGS=10V i3.9
N-Channel 30
0.095@VGS=4.5V i3,1
0.085 V =-10V 21:2.5
P-Channel -30 @ GS
0.19@Vcs=-45V 21:1.8
TSSOP-8
D1 II o E] De G2
SI UE Si6543DQ Ci] S2 e1 OJ I
SI I: E S2
G1 IE Csl G2
Top View
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage V68 cl: 20 ck 20
TA: 25°C 139 12.5
Continuous Drain Current (To = 150°C)21 ID
TA=7O°C $3.1 $21
Pulsed Drain Current IDM i 20 i 20
Continuous Source Current (Diode Conduction)a ls 1.25 -1.25
TA = 25°C 1.0
Maximum Power Dissipation" Po W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 125 °CNV
a. Surface Mounted on FR4 Board,t s 10 sec.
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Document Number: 70181 www.vishay.com . FaxBack 408-970-5600
S-49534-Rev. C, 06-Oct-97 2-1
Si6543DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDs = Vss, ID = 250 WA N-Ch 1.0
Gate Threshold Voltage Vss(th) V
VDS = VGS, ID = -250 “A P-Ch -1.0
N-Ch cl: 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = 1:20 V nA
P-Ch d: 100
Vos = 30 V, VGs = 0 V N-Ch 1
' VDS = -30 V, VGS = O V P-Ch -1
Zero Gate Voltage Drain Current loss 11A
Vos = 30 V, VGS = O V, TJ = 5500 N-Ch 25
Vos = -30 V, VGS = 0 V, T: = 55°C P-Ch -25
v03 25v,sz=1ov N-Ch 15
On-State Drain Currenta 'D(on) A
N/os 2 -5 V, VGS = -10 V P-Ch -1 5
VGS = 10 V, ID = 3.9 A N-Ch 0.043 0.065
. . VGS = -10 V, ID = 2.5 A P-Ch 0.066 0.085
Drain-Source On-State Resistancea rcrs(on) Q
VGS = 4.5 V, ID = 3.1 A N-Ch 0.075 0.095
Vss=-4.5V, ID=1.8A P-Ch 0.125 0.19
v.35 = 15 V, ID = 3.9 A N-Ch 7
Forward Transconductancea gts S
Vros=-15V, lro=-2.5A P-Ch 5
ls =1.25 A, VGS = 0 v N-Ch 0.8 1.2
Diode Forward Voltages VSD V
ls = -1.25 A, VGS = 0 V P-Ch 0.8 -1.2
Dynamicb
N-Ch 9.8 15
Total Gate Charge Qg
N-Channel P-Ch 8.7 15
V03: 10V, Vss=10V, lro=3SA N-Ch 2.1
Gate-Source Charge Qgs nC
P-Channel P-Ch 1.9
VDs=-10V,VGs=-10V,ID=-2.5A N-Ch 1.6
Gate-Drain Charge di
P-Ch 1.3
N-Ch 9 15
Turn-On Delay Time td(on)
P-Ch 7 15
N-Channel N-Ch 6 18
Rise Time tr VDD = 10 V, RL =10 Q
Iroc--1A,VsEN=10V,RG=6Q P-Ch 9 18
- N-Ch 18 27
Turn-Off Delay Time tts(ott) VDD = ZOOFEanI: 10 Q ns
b a -1 A,N/GEN=-10V, RG=6§2 P-Ch 14 27
N-Ch 6 15
Fall Time tf
P-Ch 15
Source-Drain t IF = 1.25 A, di/dt = 100 A/us N-Ch 48 80
Reverse Recovery Time IF = -1.25 A, di/dt = 100 Alps P-Ch 46 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-49534-Rev. C, 06-Oct-97
VISHAY Si6543DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
20 I I 20 I I I
VGS=10thru6V l Tc=-55°C bb" 25''C
16 16 125°C
Ci.] ii.:]
E 12 E 12
5 8 5 s
t5 4 V t5
- 4 - 4
0 2 4 6 8 O 2 4 6 8
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 750
A 0.16 I 600 \\ Ciss
Cl --,
v VGS = 4.5 V C? (
F, 0.12 8 450
c _.--'- m
C? 0.08 I 'i 300 "N, Cass
"iz'," sz = 10 v o 'ssc:.,,,,..,..,.,...
g 0.04 150 'mm-...-,
0 4 8 12 16 20 O 5 10 15 20 25 30
ID - Drain Current (A) l/ns - Drain-to-Source Voltage(V)
10 Gate Charge 2 O On-Resistance vs. Junction Temperature
Vos = 10 V _
A = VGS - 10 v
2, 8- b 3.9A A ID=3.9A A
a) Cl 1.6
“a G" "
> c A ',,,,,/'''''
E 6 ll E w,,,-'''''
= m = 1.2 A
8 ll,! E "
is, 4 f 6 Jil /
fl,. ,-' I v wee''
I / 3 0.8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70181
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S-49534-Rev. C, 06-Oct-97
Si6543DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.20
T J = 150°C
A 0.16
3 g 0.12
8 ii ID = 3.9 A
08) , 0.08 'sss,
‘23 0.04
0.4 0.6 0.8 1.0 1.2 l.4 1.6 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 I l 30
0.2 ID = 250 pA 25
'li' -0.2 'ss,,,,,, g li,
= " 15
j',' -0.4 \ g 1
gi' 'ss n.
(7’) N. 10
> -0.6 N
-0,8 's,
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
g 8 0.2
= g Notes:
se 'il 0.1 '
'if,' E Paul
it a 0.1 '
T7 g -l tl _
3 g - t2 - t
T,r- 1.Duty Cycle,D= i,
g 2. Per Unit Base = RNA =125°CNV
a 3, TJM - TA = PDMZmJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
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Document Number: 70181
S-49534-Rev. C, 06-Oct-97
VISHAY
Si6543DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Output Characteristics
VGS =10, 9, 8, 7, 6V
'g / 5 v
l' / "r"''''"""
c) J IN
0 2 4 6 8
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
A 0.32 I
fsi. 0.24
g VGS = 4.5 V
t 0 16 l
I "..,K'"
A -'''''''
iir l/ss = 10 v
f? 0.08 4:
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
VDS = 10 v /
ID = 2.5 A s,/''
Srl 4 .
fl,. '
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
rDS(on) — On-Resistance( Q )
| D — Drain Current
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
16 -55 C I 25°C -
O 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Capacitance
O 6 12 18 24 30
l/ns - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGs=1OV
1.8 - ID=2.5A
1.4 ,/
1.2 1/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70181
S-49534-Rev. C, 06-Oct-97
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Si6543DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
Tu = 150°C
| S — Source Curren1(A)
rDS(on) — On—Resistance( Q)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
g 0.4 ID = 250 11A /
c w,,,,,.''''''' g
g o 2 "
tty . o
gi' ',,,w'''" J?
-50 -25 O 25 50 75 100 125 150
T: - Temperature (°C)
P-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
1 ID - 2.5 A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0. 01 0. 1 1 IO 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
ll. 3 0.1
E E 0.1
Single Pulse
10-4 10-3 10-2 IO-l
Notes:
-5 " _
- t2 -.
l, Duty Cycle, D = T1
2. Per Unit Base = RthJA =125°CNV
3. TJM - TA = PDMZmJAm
4. Surface Mounted
Square Wave Pulse Duration (sec)
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Document Number: 70181
S-49534-Rev. C, 06-Oct-97
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