SI6542DQ ,N/P-Channel 20-V (D-S) Pair FaxBack 408-970-5600S-00873—Rev. F, 01-May-002-1Si6542DQVishay Siliconix
SI6542DQ
N/P-Channel 20-V (D-S) Pair
VISHAY
Si6542DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (Q) ID (A)
0.09@VGS=10V i2.5
N-Channel 20
0.175@Vss=4.5V i118
0.17@VGs=-10V i1.9
P-Channel -20
0.32@Vss=-4.5V cel.3
TSSOP-8
D1 II q El D2
31 I: Si6542DQ :1 Se G1 oJ
SI l: 3] S2
G1 IE Csl G2
Top View
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 20 -20 V
Gate-Source Voltage VGS i 20 i 20
TA=25°C i215 i119
Continuous Drain Current (TJ = 15ty'C)a b
TA=70°C i210 cel.5
Pulsed Drain Current 'DM l 20 ck 15
Continuous Source Current (Diode Conduction)" Is 1.25 -1.25
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambient" RthJA 125 °CNV
a. Surface Mounted on FR4 Board! s 10 sec.
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Document Number: 70171
S-00873-Rev. F, 01-May-00
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Si6542DQ
. . . . VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Vss, ID = 250 “A N-Ch 1.0
Gate Threshold Voltage Vss(th) V
VDS = VGS, ID = -250 “A P-Ch -1.0
Gate-Body Leakage ksss VDS = 0 V, VGS = i 20 V i 100 nA
Vos = 20 V, VGs = 0 V N-Ch 1
Vros = -20 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss “A
N/os = 20 V, VGs = 0 V, TJ = 55°C N-Ch 25
Vos = -20 V, VGS = O V, TJ = 55°C P-Ch -25
VDS=5V,VGS=10V N-Ch 14
On-State Drain Currenta ID(on) A
VDs = -5 V, VGS = -10 V P-Ch -1 0
VGS = 10 V, ID = 2.5 A N-Ch 0.065 0.09
Vss=-10V,lD=1.9A P-Ch 0.13 0.17
Drain-Source On-State Resistance rDS(on) Q
VGs=4-5 V, I0: I.8A N-Ch 0.100 0.175
VGS = -A.5 V, b = 1.3 A P-Ch 0.26 0.32
VDS = 15 V, ID = 2.5 A N-Ch 5
Forward Transconductancea gfs S
VDs=-15V, ID=-1.9A P-Ch 3
ls = 1.25 A, VGS = O V N-Ch 0.8 1.2
Diode Forward Voltages VSD V
ls = -r25 A, VGS = o v P-Ch 0.8 -1.2
Dynamicb
N-Ch 7 10
Total Gate Charge Qg
N-Channel P-Ch 7 10
Vos-- 10V, VGS=10V, b--2SA N-Ch os
Gate-Source Charge Qgs nC
P-Channel P-Ch 1.3
VDs=-10V,Vss=-10V,lD=-1.9A N-Ch 2.1
Gate-Drain Charge di
P-Ch 1.7
T O D I Ti t N-Ch 11 20
urn- n e a me
y d(on) P-Ch 9 20
N-Channel N-Ch 11 20
Rise Time tr VDD = 10 V. RL =10 Q
b ----1A,VsEN=10V,RG--6Q P-Ch 12 25
- N-Ch 16 30
Turn-Off Delay Tlme tttoft) VDD = Cfiir7re= 10 Q ns
ID-s-I/lam---")--) P-Ch 17 30
N-Ch 6 15
Fall Time tf
P-Ch 6 15
IF = 1.25 A, di/dt = 100 Alps N-Ch 45 70
Source-Drain Reverse Recovery Time trr
IF = -1.25 A, di/dt = 100 Alps P-Ch 35 70
a. Pulse test; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-00873-Rev. F, Ol-May-OO
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Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
// /" 6 V
VGS = 10, 9 ,8 ,7V
E 12 5 V
0 ----I--
0 1 2 3 4 5
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.25 I
v VGS = 4.5 V /
8 0.20
.tt' /
g 0.15 r,,,,,.,,,)
L 0.10
fic.: l/ss = 10 V
h 0.05
0 2 4 6 8 10
ID - Drain Current (A)
10 Gate Charge
VGS = 10 V
E 8 ID = 2.5 A
a) ,,,//"
(D 6 I
s) 4 /
0 1 2 3 4 5 6 7 8
Q9 - Total Gate Charge (nC)
rDS(on) — On-Resistance ( Q )
C — Capacitance (pF) ID — Drain Current(A)
(Normalized)
N-CHANNEL
Transfer Characteristics
16 Tc = -551
's, 25°C
12 / 125°C
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Capacitance
400 k ls,
s))tt:ts Cass
'ss. Crss
"m--..-,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 2.5 A
1.5 "e''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70171
S-00873-Rev. F, 01-May-00
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Si6542DQ
Vishay Siliconix
VISHAY
-ta-'"
1. Duty Cycle, D = T1
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0 40 n
T J = 150°C 0.35
A 10 E 0.30
E g 0.25 ID = 2.5 A
8 g 0 20
c3 CI) 0.15
f' s 0.10
1.0 0.00
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 120
a) 's. =
E "ss, ID 250 pA g
E tho t, 60
"ic'," "s. ffl
8 "s, 40
> -0.5 l
-1_0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
st, ' 0.2
_ N Notes:
1rt'fzjf--.s, 'P
LU N 0.1
'0 g .
2. Per Unit Base = RIhJA=125°CIW
3, TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 1O-1 1 10 30
Square Wave Pulse Duration (sec)
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b4 S-00873-Rev. F, Ol-May-OO
VISHAY
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Output Characteristics
VGS = 10, 9 V V l V
12 J) ef I
Ct. y' w,,.-"'''''' 6 v
0 1 2 3 5
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
A 0.4 V = 4.5 V
_11-', /
I VGS = 10 V
0 2 4 6 10
ID - Drain Current (A)
Gate Charge
Vss =10 v /'"
S 8 - ID =1.9A "
s) 4 /
0 2 4 6 8
Q9 - Total Gate Charge (nC)
rDS(on) — On-Resistance ( Q
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc=-55''C J
12 /‘ 125°C -
25''C //
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Capacitance
F, Coss
200 \ '"""----......._,
O 4 8 12 16 20
l/ns - Drain-to-Source Voltage(V)
2 0 On-Resistance vs. Junction Temperature
Vs = 10V
b = 1.9 A
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 70171
S-00873-Rev. F, 01-May-00
www.vishay.com . FaxBack 408-970-5600
Si6542DQ
. . . . VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.7
TJ = 150°C A
a? v 0.5
g ii 0.4 I = 1 9 A
'g é 0.3
u, ‘f N,
- (7°; ss
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 l 120
ID = 250 “A 100
s. / 80
8 o.,.,--'''''" E )
E 0.0 w.--''''" tg 60
g." w.--''''''' E
ji,', 40
-0.5 ‘N
20 'N,
-1.0 0
-50 -25 0 25 50 75 100 125 150
0.001 0.010 0.100 1.000 10.000
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
g 8 0.2
ts g Notes:
o ‘U -
'3 CL P
8 g DM
33 , 0.1 '
TD " -1 " F.-
CD (D - t2 -
.5 = 1
"rT,r- 1.Duty Cycle,D= T
g 2. Per Unit Base = RthJA = 125°CNV
a . P I 3. TJM - TA = PDMzthoA(t)
Single u se 4. Surface Mounted
10-4 10-3 10'2 Ity-l 1 10 30
Square Wave Pulse Duration (sec)
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