SI6469DQ ,P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-60717—Rev. A, 01-Feb-992-1Si6469DQVishay Siliconix
SI6469DQ
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si6469DQ
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
TSSOP-8
D [I o D G "T
s LE Si646900 CE s
S [I CEI S
G IE D
Top View
PRODUCT SUMMARY “?@9
git? 'ks't
VDs (V) rDS(on) (C2) ID (A) e bos
0.028 @ VGS = -A.5 v i6.0 x It C,w'' \ed
0.031 ©VGs---32V i5.8 9 .tl a
-8 - '
0.040@VGs=-2di1/ ce5.0 l."
0.065@VGs=-1-81/ +3.6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage Vss l 8
TA = 25°C 16.0
Continuous Drain Current (TJ = 150001 b lo
TA = 70°C i 5.0 A
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)' b ls -1.25
TA = 25°C 1.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.0
Operating Junction and Storage Temperature Range Tr Tsig -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 83
Maximum Junction-to-Ambient" RthJA ''CM/
Steady State 95
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
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Document Number: 70858
S-60717-Rev, A, 01-Feb-99
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Si6469DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typb Max Unit
Static
Gate Threshold Voltage VGSm Vos = VGs, ID = -250 p.A -0.45 V
Gate-Body Leakage lsss 1/ros = O V, VGs = i 8 V i 100 nA
VDS = -6.4 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS pA
Vros---64 V,VGS= 0V, TJ=70°C -25
On-State Drain Currenta ID(on) VDS 2_' -8 V, VGS = -4.5 V -30 A
N/ss = -A.5 V, ID = Ail) A 0.021 0.028
VGS = -3.3 V, Irs = -53 A 0.024 0.031
Drain-Source On-State Resistancea rDSmm Q
VGS = -2.5 V, ID = -5.0 A J030 0.040
VGS = -1.8 V, b = -35 A 0.048 0.065
Forward Transconductancea gfs VDs = -8 V, ID = -6.0 A 18 S
Diode Forward Voltagea VSD ls = -1.25 A, VGS = O V Ah68 -1 .1 V
Dynamicb
Total Gate Charge Q9 20 40
Gate-Source Charge Qgs Vros = -6 V, VGs = -4.5 V, ID = Ai.0 A 4.5 nC
Gate-Drain Charge di 3.6
Turn-On Delay Time tam”) 20 50
Rise Time tr VDD = -6 V, RL = 6 Q 30 60
Turn-Off Delay Tlme tum) '0 E -1 A, VGEN = -4.5 V, Rs = 6 Q 85 150 ns
Fall Time tf 50 90
Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 Alps 50 100
a. Pulse test; pulse width 5 300 ps, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing
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Document Number: 70858
S-60717-Rev, A, 01-Feb-99
VISHAY
Si6469DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
24 Kas = 5 thru 2,5 v
Ci.] iii:]
E 18 2 V E
o y"" o
E' 12 E
0 1.5 V D
_ 6 l -
0 2 4 6 8
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.08
g 'j.1:S
73 0.06 8
I 0.04 (I)
"il,'" o
f 0.02
0 6 12 18 24 30
ID - Drain Current (A)
4.5 Gate Charge
A Vos = 6 V
i) 3.6 _ ID = 6.0 A Ct
tD 2 7 I','-',. 8
g . I g g
<3 , g
s,'. 0 fl
1',1-l 1.8 " I V
O , ig'"
8 0.9 "
0 4 8 12 16 20
% - Total Gate Charge (nC)
Transfer Characteristics
TC = -55''C
24 25°C so,
18 125''C -
0 0.5 1.0 1.5 2.0 2.5 3.0
Was - Gate-to-Source Voltage(V)
Capacitance
3200 'ss,, Ciss
"s...........,
1600 N,
800 ssc.'.?'''
"---_,
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
VGS = 4.5 V
1.4 - ID = 6.0 A wr'''"
1.2 ww"'''
0.8 ,/
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70858
S-60717-Rev, A, 01-Feb-99
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Si6469DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30 0.06
T J = 150°C A 0.05
if: 10 8 0 04
E E . l
y .9 ID = 6.0 A
E g 0.03
ii 8 'ss,
I I 0.02 "'sm-,
" 0.01
0.00 0.2 0.4 0.6 0.8 ..0 1.2 0 2 4 6 8
VsD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 I I 30
05 ID = 250 wk 25
'r'' 0.4
8 r,,,--'''''''
g 0.2 g t
S' m.,,--'''" g 15 l
"ii' -0.0 g N
f - w,,,,,--''''''' 10
0.2 'ss,,,,,,,
-0 4 5
. N...
"''--.
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Thermal Impedance
Normalized Effective Transient
Single Pulse
10-4 10‘3
Square Wave Pulse Duration (sec)
Notes:
Tl/-1.lT--1t,
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 95“CNV
3. Tou - TA = PDMZthAm
4. Surface Mounted
10 100 600
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Document Number: 70858
S-60717-Rev, A, 01-Feb-99
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