SI6463DQ ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
SI6466 ,20V N-Channel PowerTrench MOSFETApplications low R DS(ON)• Battery protection • Low profile TSSOP-8 package • DC/DC conversion • P ..
SI6466ADQ ,N-Channel 2.5-V (G-S) MOSFET FaxBack 408-970-5600S-00984—Rev. A, 15-May-002-1Si6466ADQNew ProductVishay Siliconix
SI6463DQ
P-Channel 2.5V Specified PowerTrench MOSFET
Si6463DQ D G S S S S D D April 2001 Si6463DQ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –8.8 A, –20 V. R = 0.0125 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.018 Ω @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended VGSS range (±12V) for battery drive voltage (2.5V – 12V). applications Applications • Low gate charge • Load switch • High performance trench technology for extremely • Motor drive low R DS(ON) • DC/DC conversion • Power management • Low profile TSSOP-8 package 5 4 6 3 7 2 TSSOP-8 8 1 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1) –8.8 A D – Pulsed –50 P Power Dissipation (Note 1a) 1.3 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 96 R °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6463 Si6463DQ 13’’ 16mm 3000 units Si6463DQ Rev. A(W) 2001
