SI6435DQ ,30V P-Channel PowerTrench MOSFETApplicationslow RDS(ON)• Battery protection• Low profile TSSOP-8 package• DC/DC conversion• Power m ..
SI6435DQ ,30V P-Channel PowerTrench MOSFETFeaturesThis P-Channel MOSFET is a rugged gate version of• –4.5 A, –30 V R = 40 mΩ @ V = –10 VDS(ON ..
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SI6435DQ
30V P-Channel PowerTrench MOSFET
Si6435DQ D G S S S S D D September 2001 Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –4.5 A, –30 V R = 40 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 70 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Extended V range (±20V) for battery applications GSS ratings (4.5V – 20V). • High performance trench technology for extremely Applications low R DS(ON) • Battery protection • Low profile TSSOP-8 package • DC/DC conversion • Power management • Load switch 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1) –4.5 A D – Pulsed –30 P Power Dissipation (Note 1a) 1.3 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W θJA (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6435 Si6435DQ 13’’ 16mm 3000 units 2001 Si6435DQ Rev B(W)
