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SI5975DC-T1
Dual P-Channel 12-V (D-S) MOSFET
VISHAY
Si5975DC
Vishay Siliconix
Dual P-Channel 12-v (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (O) In (A)
0.086 @ Vas = -4.5 v -4.1
-12 0.127 @ vss = -2.5 v -3.4
0.164@sz= -1.8 v -3.0
1206-8 ChipFET TM
Bottom bfmy
Ordering Information: Si5975DC-T1
Marking Code
Lot Traceability
and Date Code
Part # Code
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -12
Gate-Source Voltage VGS i8 V
TA-- 25°C -4.1 -3.1
Continuous Drain Current (T J = 150°C)8 ID
TA = 85°C -3.0 -2.2 A
Pulsed Drain Current IBM -10
Continuous Source Current (Diode Conduction)a Is -1.8 -0.9
TA = 25°C 2.1 1.1
Maximum Power Dissipationa TA = 85°C PD 1.1 0.6 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)“ C 260 CC
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maximum Junction-to-Ambienta Steady State RNA 90 110 ''G/W
Maximum Junction-to-Foot (Drain) Steady State Pimp 30 40
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71320
S-21251-Rev. B, 05-Aug-02
www.vishay.com
Si5975DC
VISHAY
Vishay Siliconix
SPECIFICATIONS (Ta = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) 1/ros = VGS, ID = -1 mA -0.45 V
Gate-Body Leakage Kass VDS = 0 V, l/ss = i8 V i 100 nA
VDs---9.6V,VGs--0V -l
Zero Gate Voltage Drain Current IDSS 11A
VDS = -9.6 V, l/ss = 0 V, To = 85°C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -10 A
vss = -4.5 v, ID = -3.1 A 0.070 0.086
Drain-Source On-State Resistancea rDS(on) VGs = -2.5 V, ID = -2.5A 0.100 0.127 Q
VGs=-1.8V,lD---1.0A 0.131 0.164
Forward Transconduc’tancea gfs Vos = -5 V, ko = -3.1 A 8
Diode Forward Voltagea VSD Is = -0.9 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 5.7 9
Gate-Source Charge Qgs VDs = -6 V, VGS = -4.5 V, ID = -3.1 A 1.2 nC
Gate-Drain Charge di 1.2
Turn-On Delay Time 1d(on) 1O 15
Rise Time t, VDD = -6 V, RL = 6 Q 2O 30
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 31 45 ns
Fall Time tf 26 40
Source-Drain Reverse Recovery Time trr IF = -0.9 A, di/dt = 100 Alps 4O 60
a. Pulsetest; pulse width 5 300 1.15, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics 10 Transfer Characteristics
Tc = -55°C
Ve,s = 5thru 2.5 V 8
8 l 25°C ff
j) 2V 7/
V -.-- V 6
5 6 I p'"''''" E 125°C
.E / .E 4
o / r o
I 1.5 v I
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
ves - Gate-to-Source Voltage (V)
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Document Number: 71320
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5975DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
705(0n) — On-Resistance ( Q)
o 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vos = e v
E ID = 3.1 A /
-i's.' 4 r
o 2 ,__/
O 1 2 3 4 5 6
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu =150°C
ls — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) - On-Resistance (Q)
rDS(on) — On-Resistance(§2)
(Normalized)
Capacitance
"ss., Ciss
Mt---,
200 1sdC."iT
0 3 6 9 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 4.5 V
ID = 3.1 A
',,w'''''''"
0.8 ,/
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.20 ID = 3.1 A
0.10 'Iss.
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71320
S-21251-Rev. B, 05-Aug-02
www.vishay.com
Si5975DC ",LiWg,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.25 50 ,
, E 30 (
li ID = 1 mA v
y 0.05 g
'ci.. o. 20
> s,,,,,,,,-''''''' ,
-0.05 /l
w,,,,,,,,,? ii N”.
-0.15 0
-50 -25 0 25 50 75 100 125 150 10-4 10-3 " 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 Pros,
1 ta 4 h
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 90°C/W
Normalized Effective Transient
Thermal Impedance
3. Tn, - TA = PDMZthuA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
3 g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71320
2.4 S-21251-Rev. B, 05-Aug-02
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