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SI5933DC
Dual P-Channel 1.8-V (G-S) MOSFET
Si5933DC
Vishay Siliconix
VISHAY
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY Q
ott' tts
Vros (V) rDS(on) (O) In (A) er Cost
Ch110 @ VGS = -4.5 V .35 't 1t3't'ie axeé
-20 0.160 @ vss = -2.5 v -3.0 %N
0.240 © VGS = -1.8 v -2.4 l .
1206-8 ChipFEC"
G.o_| G2°_|
Marking Code
Lot Traceability
and Date Code
Bottom Wew
Ordering Information: Si5933DC-T1
Part # Code
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage VGS +8
TA = 25°C -3.6 -2.7
Continuous Drain Current (T J = 150°C)8 ID
TA-- 85°C -2.6 -1.9 A
Pulsed Drain Current IBM -10
Continuous Source Current (Diode Conduction)a Is -1.8 -0.9
TA = 25°C 2.1 1.1
Maximum Power Dissipationa PD W
TA = 85°C 1.1 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)“ C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maxi J tion-to-Ambient" R
ax1mum unc Ion o m ien Steady State th0A 90 110 ''G/W
Maximum Junction-to-Foot (Drain) Steady State Pimp 30 40
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71238
S-21251-Rmt. B, 05-Aug-02
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Si5933DC ",LiWg,
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.45 V
Gate-Body Leakage Kass VDS = 0 V, l/ss = i8 V i 100 nA
bbs---ttfb(Vas--t?V -l
Zero Gate Voltage Drain Current IDSS pA
VDs---16V,Vas--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -10 A
vss = -4.5 V, ID = -2.7 A 0.095 0.110
Drain-Source On-State Resistancea rDS(on) VGs = -2.5 V, ID = -2.2A 0.137 0.160 Q
Vas = -1.8 V, ID = -1 A 0.205 0.240
Forward Transconduc’tancea gfs Vros = -10 V, ko = -2.7 A 7
Diode Forward Voltagea VSD Is = -0.9 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 4.4 6.5
Gate-Source Charge Qgs Vos = -10 V, VGS = -4.5 V, ID = -2.7 A 1.4 nC
Gate-Drain Charge di 0.65
Turn-On Delay Time 1d(on) 16 25
Rise Time t, VDD = -10 V, RL = 10 Q 30 45
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 30 45 ns
Fall Time tf 27 40
Source-Drain Reverse Recovery Time trr IF = -0.9 A, di/dt = 100 Alps 2O 40
a. Pulsetest; pulse width 5 300 1.15, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 I I l 10 I I
VGS = 5 thru 3 V Tc = -55°C
2.5 v I I
a l 8 25°C \, /
g.] sp'''''" ia-f M
E 6 E 6 125°C -
.E 2 V JS
E 4 E 4
o 2' o
- 2 - 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) ves - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71238
2-2 S-21251-Rev. B, 05-Aug-02
VISHAY
Si5933DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
705(0n) — On-Resistance ( £2)
— Gate-to—Source Voltage (V)
ls — Source Current (A)
On-Resistance vs. Drain Current
VGS = 1.8 V
V = 2.5 V
o,,,,,..--'''''''' -
----"" VGS - 4.5 V
O 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
VDS = 10 V
ID = 2.7 A
O 1 2 3 4 5
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
Ss.. Cass
''rm-_,
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 4.5 V
I =2.7A
1.4 D www'''
s,,,,,-''''''''
1.2 vw'''
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.7 A
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71238
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5933DC ",LiWg,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
O 3 " 40
ID = 250 11A o,,,,,''''''
E 0.2 " k
g ',,,,,,,p'''''' F 30
.g / v I
tO 0.1 t,
F. o. 20
il'" 1
> 0.0 ,
-0 1 N,
-0.2 0
-50 -25 O 25 50 75 100 125 150 10-4 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
it' Duty Cycle = 0.5
I' "il.
"ii',' g Notes:
E k' f
g a 0.1 FEM
E tl _
's ‘15.th
a 1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 90°C/W
Sin Ie Pulse 3. Tn, - TA = PDMZWA“)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
I' "i.
S 2 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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2.4 S-21251-Rev. B, 05-Aug-02
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