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SI5905DC
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si5905DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (O) In (A)
0.090 @ Vas = -4.5 v i4.1
-8 0.130 @ vss = -2.5 v $3.4
0.180@sz= -1.8 v $2.9
1206-8 ChipFET"'
Bottom bfmy
Ordering Information: Si5905DC-T1
Marking Code
Lot Traceability
and Date Code
Part # Code
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -8
Gate-Source Voltage VGS i8
TA=25°C i4.1 i3.0
Continuous Drain Current (T J = 150°C)8 ID
TA-- 85°C 12.9 2:22 A
Pulsed Drain Current IBM 3: 10
Continuous Source Current (Diode Conduction)a Is -1.8 -0.9
TA = 25°C 2.1 1.1
Maximum Power Dissipationa PD W
TA = 85°C 1.1 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)“ C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maxi J tion-to-Ambient" R
ax1mum unc Ion o m ien Steady State th0A 90 110 ''G/W
Maximum Junction-to-Foot (Drain) Steady State Pimp 30 40
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71066
S-21251-Rmt. B, 05-Aug-02
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Si5905DC
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.45 V
Gate-Body Leakage Kass VDS = 0 V, l/ss = i8 V i 100 nA
VDs---6.4V,VGs--0V -l
Zero Gate Voltage Drain Current IDSS 0A
VDS = -6.4 V, l/ss = 0 V, To = 85°C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -10 A
l/ss = -4.5 v, ID = -3 A 0.075 0.090
Drain-Source On-State Resistancea rDS(on) VGs = -2.5 V, ID = -2.5A 0.110 0.130 Q
VGs=-1.8V,lD---1.0A 0.150 0.180
Forward Transconduc’tancea gfs VDS = -5 V, ID = -3 A 7
Diode Forward Voltagea VSD Is = -0.9 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 5.5 9
Gate-Source Charge Qgs VDS = -4 V, VGS = -4.5 V, ID = -3 A 0.5 nC
Gate-Drain Charge di 1.5
Turn-On Delay Time 1d(on) 1O 15
Rise Time t, VDD = -4 V, RL = 4 Q 45 70
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 30 45 ns
Fall Time tf 1O 15
Source-Drain Reverse Recovery Time trr IF = -0.9 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width 5 300 1.15, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
"l l / "r-''''''''""",',"], 10 I I
VGS = 5 thru 3 V / / 2.5 V Tel: -55 C / /
8 ( 8 2500 \7, /
g.] / 2 v ia-f I
E 6 E 6 TO -
2 I 2 123 C
5 y s I
O ow'''' O
E 4 E 4
I viii) I
o 1.5 V o I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
ves - Gate-to-Source Voltage (V)
Document Number: 71066
www.vishay.com
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5905DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30 I
I; Vss = 1.8 V y
E 0.20
dl / ",v/
k 0.15 /
C) VGS = 2.5 V 7
I o,,.''''" ",.C,i..C1v----'''"'"
Ct?,'] 0.10 Vas=4.5V -
O 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
VDs=4V
4 ko--3A /
S — Gate-to—Source Voltage (V)
O 1 2 3 4 5 6
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu =150°C
ls — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) - On-Resistance (Q)
rDS(on) — On-Resistance(§2)
(Normalized)
Capacitance
800 N.
Ns,,,.,. Ciss
400 't
)tss, Cass
200 "s-...,.,
"ss..,,,..,
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 4.5 V
lro=3A
1.4 ',,,,w'''"
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.20 lo = 3 A
0.10 "ss..,.
a"----.
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71066
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5905DC "Gai;
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
VGS(th) Variance (V)
Thermal Impedance
Threshold Voltage Single Pulse Power
0.4 50 ,
0.3 40
ID=zsouA ws'''''' w il
w,,,,,,,,-''''''''" E 30 k
0.1 / ii"
-0.2 0
-50 -25 O 25 50 75 100 125 150 10-4 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 Pros,
1 ta 4 h
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 90°C/W
3. Tn, - TA = PDMZthuA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
3 g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71066
S-21251-Rev. B, 05-Aug-02
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