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SI5903DC-T1
Dual P-Channel 2.5-V (G-S) MOSFET
VISHAY
Si5903DC
Vishay Siliconix
Dual P-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (O) ID (A)
O.155@VGS = -4.5V 1:29
-20 0.180 © VGS = -3.6 v $2.7
0.260 @ vss = -2.5 v i2.2
1206-8 ChipFET"
Bottom Wew
Ordering Information: Si5903DC-T1
Marking Code
Lot Traceability
and Date Code
Part # Code
'ttte,,,';
e1 'T G2 ''T
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage I/os -20
Gate-Source Voltage VGS i 12
TA--25''C $2.9 $2.1
Continuous Drain Current (TJ = 160oC)a ID
TA=85°C $2.1 21:15 A
Pulsed Drain Current IBM 1 10
Continuous Source Current (Diode Conduction)a ls -1.8 -0.9
TA = 25°C 2.1 1.1
Maximum Power Dissipationa PD W
TA = 85°C 1.1 0.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maximum Junction-to-Ambienta RthJA
Steady State 90 110 och
Maximum Junction-to-Foot (Drain) Steady State Rm”: 30 40
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71054
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5903DC ",LiWg,
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.6 V
Gate-Body Leakage Kass VDS = 0 V, Vas = ct: 12 V i 100 nA
bbs---ttfb(Vas--t?V -l
Zero Gate Voltage Drain Current IDSS 11A
VDs---16V,Vas--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -10 A
vss = -4.5 V, ID = -2.1 A 0.130 0.155
Drain-Source On-State Resistancea rDS(on) VGs = -35 V, ID = -2.0A 0.150 0.180 Q
VGS = -2.5 V, ID = -1.7A 0.215 0.260
Forward Transconduc’tancea gfs Vros = -10 V, ko = -2.1 A 5
Diode Forward Voltagea V39 ls = -0.9 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 3 6
Gate-Source Charge Qgs Vos = -10 V, VGS = -4.5 V, ID = -2.1 A 0.9 nC
Gate-Drain Charge di 0.6
Turn-On Delay Time 1d(on) 13 20
Rise Time t, VDD = -10 V, RL = 10 Q 35 55
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 25 40 ns
Fall Time tf 25 40
Source-Drain Reverse Recovery Time trr IF = -0.9 A, di/dt = 100 Alps 4O 80
a. Pulsetest; pulse width 5 300 1.15, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 l l / 31v ----"'" 10 I I r
VGS--5thru4V f/jr--'- Tc=-55°C /
w,,,.''''' 8 C) y
" 3V < /7
a:" (Y'' A
it' 6 T it' 6 l I 125°C -
g 2 5 V is
.E V . JS J,
e 4 e 4 y
o ft,". / o /
o 'rj,''"" 2 V o J
- 2 - 2
---a=-
"r-''''""'""
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) ves - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71054
2-2 S-21251-Rev. B, 05-Aug-02
VISHAY
Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a VGS = 2.5 V
a) 0.3
k 0 2 ' VGS = 3.6 V
C) . I
I m..----- _...-.
E o...,..,,,-------""'"''"
% sz = 4.5 v
o 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vos = 10 v
E ID = 2.1 A ow''''
-i's.' I
tii,'' 2 g
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°c
ls — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
Iss, Ciss
It Cass
"m-.-..
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 4.5 V ,,,,w'''
ID = 2.1 A /
ww'''''"
1.2 //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
|D=2.1A
0.25 l
0.15 "s,
"s..-.
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71054
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5903DC ",LiWg,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.3 ,/ 40 l
0.2 1cy=2sowA,,/'' l
w''''" 30
Power (W)
VGS(th) Variance (V)
-50 -25 0 25 50 75 100 125 150 10-4 10-3 " 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 Pros,
1 ta 4 h
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 90°C/W
Normalized Effective Transient
Thermal Impedance
3. Tn, - TA = PDMZthuA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
3 g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71054
2.4 S-21251-Rev. B, 05-Aug-02
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