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SI5475DC-T1
P-Channel 12-V (D-S) MOSFET
Si5475DC
Vishay Siliconix
VISHAY
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY “Q
VDS (V) rDS(on) (Q) In (A) “$0 'l'its't
ooa1@v - 45v ttlt, itt'' ily
. GS - - . -7.6 "sro''' 3‘3
-12 0.041 @ Vas = -2.5 v -6.6 .
0.054 © VGS = -1.8 V -5.8 1.*
1206-8 ChipFET'"
Marking Code
-- Lot Traceability
and Date Code
Part # D
Bottom View
P-Channel MOSFET
Ordering Information: Si5475DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -12
Gate-Source Voltage VGS 18
TA = 25°C -7.6 -5.5
Continuous Drain Current (T J = 150°C)a ID
TA = 85°C -3.5 -3.9 A
Pulsed Drain Current IDM i20
Continuous Source Current? Is -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature? C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State Pimp 15 20
a. Surface Mounted on I" x I" FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71324
www.vishay.com
S-21251-Rev. B, 05-Aug-02 1
Si5475DC “3%
Vishay Siliconix
SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -l mA -0.45 V
Gate-Body Leakage Kass Vos = 0 V, I/ss = i8 V i 100 nA
VDS---9.6 V,Ves=0V -l
Zero Gate Voltage Drain Current IDSS ”A
Vos = -9.6 V, VGS = O V, To = 85°C -5
On-State Drain Currenta 'D(on) VDS s -5 V, VGS = -4.5 V -20 A
Vas = -4.5 V, ID = -5.5 A 0.027 0.031
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -4.8A 0.035 0.041 Q
Ves = -1.8 V, ID = -2 A 0.045 0.054
Forward Transconductancea git VDS = -5 V, ID = -52 A 19 S
Diode Forward Voltagea VSD ls = -1 .1 A, VGS = 0 V -0.7 -1.2 V
Dynamic”
Total Gate Charge Q9 19 29
Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -5.5 A 3.9 nC
Gate-Drain Charge di 3.6
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = -6 V, RL = 6 Q 20 30
Turn-Off Delay Time td(ofi) lo E -l A, VGEN = -4.5 V, Re = 6 Q 122 180 ns
Fall Time tf 80 120
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 Alps 4O 60
a. Pulse test; pulse width S 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 VGS = 5 thru 2.5 v T - o J
c - -55 C
2 v 16 I
/ 25°C I /
g 15 I g 7/
5 5 12 , 125°C -
c 10 c
o 5 1.5 V o
O 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) Vas - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71324
2 S-21251-Rev. B, 05-Aug-02
VISHAY
Si5475DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10 3000
A 2500
E 0.08 A
2 VGS = 1.8 V sr?,
Sl 8 2000
3 0 06 E
2 . 'ti
h CL 1500
(I3 a,,.,..---''''" VGS = 2.5 V O
0.04 I
E 0 1000
0.02 VGS = 4.5 V - 500
0.00 O
o 5 10 15 20 0 2 4 6 8 10 12
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 I 1.4 I I
A VDs=6V Vgs=4.5V
a |D=5.5A A 1.3 |D=5.5A
(I,', 4 9‘, . /
> E A /
8 / _1r_i E 1.2 /
5 3 8 'i-s-s
:3 “F E /
5 C 8 1.1
4-0 C)
J. I ?i2 pr
, / J, 1.0
8 /- f
> 1 0.9 //
0 0.8 o,,,,,,,''''''''
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) T J - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.08
2:, T = 150°C I
bl ‘3 0.06 ID = 5.5 A
00) c? 0.04 'css,
f 0.02
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71324 www.vishay.com
S-21251-Rev. B, 05-Aug-02
Si5475DC “3%
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.30 50
0.25 /' l
0.20 / 40
ID = 1m A "
E 0.15 I
ID " A 30
(is 0.10 5 I
A 0.05 E
'ci.. n. 20
8 0 00
> - . l
-o.05 tt
-0.1o ',,,,,,e" "s.
-0.15 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ll' Duty Cycle = 0.5
g "il.
g a 0.1 Piw
E -5 t, _
's ta _'l t
a 1. Duty Cycle, D = T;
2. Per Unit Base = RNA = 80°C/W
Sin Ie Pulse 3, To, - TA = PDMZthJAm
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
11:”, Duty Cycle = 0.5
g a 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71324
4 S-21251-Rev. B, 05-Aug-02
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