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SI5445DC-T1
P-Channel 1.8-V (G-S) MOSFET
VISHAY Si5445DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY stiif
VDS (V) rDS(on) (O) ID (A) gl? see
0.035 @ VGs = -4.5 v $7.1 't ltiB ee AO' ily
"est' 0‘9
-8 0.047 © VGS = -2.5 v $6.2 .
0.062@Vss= -1.8 v i5] 1.ts
1206-8 ChipFET'"
Marking Code
Lot Traceability
and Date Code
Part # Code D
Bottom Wew
P-Channel MOSFET
Ordering Information: Si544SDC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage I/os -8
Gate-Source Voltage VGS i8
TA--25''C $7.1 $5.2
Continuous Drain Current (TJ = 160oC)a ID
TA=85°C $5.2 21:3.7 A
Pulsed Drain Current IBM 120
Continuous Source Currenta ls -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 och
Maximum Junction-to-Foot (Drain) Steady State Rm”: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71063 www.vishay.com
S-21251-Rmt. B, 05-Aug-02 2-1
Si5445DC "Gai;
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.45 V
Gate-Body Leakage Kass VDS = 0 V, l/ss = i8 V i 100 nA
VDs---6.4V,VGs--0V -l
Zero Gate Voltage Drain Current IDSS 0A
VDs=-6.4V,Vss--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -20 A
vss = -4.5 V, ID = -5.2 A 0.030 0.035
Drain-Source On-State Resistancea rDS(on) VGs = -2.5 V, ID = -4.5A 0040 0.047 Q
Vas = -1.8 V, ID = -2A 0.052 0.062
Forward Transconduc’tancea gfs Vos = -5 V, ko = -5.2 A 18
Diode Forward Voltagea VSD Is = -1 .1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 17 26
Gate-Source Charge Qgs VDs = -4 V, VGS = -4.5 V, ID = -5.2 A 2.8 nC
Gate-Drain Charge di 2.6
Turn-On Delay Time 1d(on) 15 25
Rise Time t, VDD = -4 V, RL = 4 Q 45 70
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 110 165 ns
Fall Time tf 65 100
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 I I 20 l
ifjf, VGS =5thru 2.5V TC: -55°C J,
16 16 I
2 V 2src /V
g.] / ia-f 7/
E 12 E 12 ' 125°C -
.E y JS
E 8 S 8
I 1.5 V I
- 4 - 4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) ves - Gate-to-Source Voltage (V)
Document Number: 71063
www.vishay.com
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5445DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
v 0.08 - Mas-- 1.8V I
s'. ",,,,V
tO 0.06
n: V = 2.5 V
k w,....--'" GS
I 0.04
lj" o.-------"'"''"'" VGS = 4.5 V
o 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 4 V /
E ID = 5.2 A /
'r', 3 /
O 4 8 12 16 20
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J = 150°C
'ii":.]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) - On-Resistance (Q)
rDS(on) — On-Resistance(§2)
(Normalized)
Capacitance
0 2 4 6 8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
I/ss = 4.5 V
ID = 5.2 A
'_,,,.,-'"
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
N ID: 5.2A
's-----........,,,
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71063
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5445DC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.4 50
o 3 " 40
ID = 250 pA
g ig. 30
E 0.1 / a
F. a 20
-0.2 0
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Single Pulse Power
10-2 10-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 80°C/W
3. Tn, - TA = PDMZthuA(t)
4. Surface Mounted
10 100 600
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
I' "i.
S g 0.1
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
www.vis hay.com
Document Number: 71063
S-21251-Rev. B, 05-Aug-02
www.ic-phoenix.com
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