SI5402DC ,N-Channel 2.5-V (G-S) Rated MOSFETSi5402DCVishaySiliconixN-Channel 30-V (D-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.035@V ..
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SI5404DC-T1 ,N-Channel 2.5-V (G-S) MOSFETS-31989—Rev. C, 13-Oct-03 1Si5404DCVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI5402DC
N-Channel 2.5-V (G-S) Rated MOSFET
"Gai; Si5402DC
Vishay Siliconix
N-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY Cs)
VDs (V) rDS(on) (O) ID (A) s1if
0.035@v =10V $6.7 “ 9
30 GS gl? Ces''
0.055 © Vas = 4.5 v $5.3 e O
, , ttrl
1206-8 ChipFET'" D
Marking Code
Lot Traceability
and Date Code
Bottom Mew Part # Code
N-Channel MOSFET
Ordering Information: Si5402DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage Ves i 20
TA=25°C i6] i4.9
Continuous Drain Current (To = 150°C)8 ID
TA=85°C $4.8 21:35
Pulsed Drain Current IDM i20
Continuous Source Current (Diode Conduction)a ls 2.1 1.1
TA = 25''C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
Soldering Recommendations (Peak Temperature? C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State Rm”: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71062 www.vishay.com
S-21251-Rmt. C, 05-Aug-02 2-1
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www.loq.com
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