SI4982DY-T1 ,Dual N-Channel 100-V (D-S) MOSFETS-03950—Rev. B, 26-May-032-1Si4982DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
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SI4982DY-T1
Dual N-Channel 100-V (D-S) MOSFET
VISHAY
Si4982DY
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY 4 stelt',' bos
VDs (V) rDS(on) (Q) ID (A) tro
0.150@VGS=10V 2.6
0.180@VGS=6V 2.4
Top Mew
Ordering Information: Si4982DY
Si4982DY-T1 (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS $20
TA = 25°C 2.6
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 2.1
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)" ls 1.7
TA = 25°C 2.0
Maximum Power Dissipation" PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 62.5 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70748
S-03950-Rev. B, 26-May-03
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Si4982DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(1h) VDS = VGS, ID = 250 WA 2 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V d: 100 nA
VDs=100V,VGs=0V 1
Zero Gate Voltage Drain Current 'Dss WA
VDS=1OOV,VGS=OV,TJ=55°C 20
On-State Drain Currenb low") VDS = 5 V, VGS = 10 V 15 A
VG3=10V,ID=2,6A 0.130 0.150
Drain-Source On-State Resistanceb rDS(on) Q
VGS=6V, ko=2.4A 0.140 0.180
Forward Transconductanceb gts VDS = 15 V, ID = 2.6 A 11 S
Diode Forward Voltageb VSD ls = 1.7 A, l/ss = O V 1.2
Dynamica
Total Gate Charge % 15 30
Gate-Source Charge Qgs Vos = 50 V, VGS = 10 V, ID = 2.6 A 2.7 nC
Gate-Drain Charge di 4.0
Gate Resistance R9 1 4.4 Q
Turn-On Delay Time td(on) 10 20
Rise Time tr VDD = 50 V, RL = 50 Q 10 20
Turn-Off Delay Time taom ID _ 1 A, VGEN = 10 V, RG = 6 Q 30 60 ns
Fall Time if 10 20
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 60 90
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
www.vishay.com Document Number: 70748
2-2 S-03950-Rev. B, 26-May-03
ic,fiF,Ai, Si4982DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
16 7 VGS=10thru6V 16
Cai. Ci.
E 12 E 12
[e 5 V S
.E 8 E 8 A
a 'tCo" a
I , TC = 125°C
0 D _ _
- 4 - 4 25°C
/ _ 4 v 's' -55l
0 1 2 3 4 0 1 2 3 4 5 6
Vos - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.25 1200
A 0.20 v,,,,?
G o,.,,,,-'''",,,,,,,,,-"'' _ 900 Ciss
V V = 6 V I
tn GS o.
g 0 15 'u,..-''"" ii
.3 i-er:.:.'::.','.','..:--"'''''" Vss = 10 v lj,
/ll g 600
6 0.10 8
5,9 300 Coss
f? 0.05
"''"""-"T _
0.00 0 I
0 4 8 12 16 20 0 20 4O 60 80 100
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
20 Gate Charge 2 On-Resistance vs. Junction Temperature
VDs--50V VGs=10V
16- |D=2.6A f A 2107 |D=2.6A /
12 o,,,/'''
s,,,,,,,.'''''''
sg. 76
> C A 1.5 /
b' " I-', f: "
f,'. 8 6 :23] 1.0
8 /''" i-c: -.-.---''''"
L, 4 - il" 0.5
0 7 14 21 28 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Document Number: 70748
www.vishay.com
S-03950-Rev. B, 26-May-03
Si4982DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V) Is — Source Current(A)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ=25°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 “A
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
l’DS(on) - On-Resistance( £2)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
0.20 7
ID = 2.6 A
's-...,
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
IO 'hc
"sm,,,,
0.01 0.10 1.00 10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2
Square Wave Pulse Duration (sec)
Notes:
-ly-1 H
1. Duty Cycle, D = T
2. Per Unit Base = RmJA = 62.5”C/W
3. Tos, - TA = PDMZIhJAm
4. Surface Mounted
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Document Number: 70748
S-03950-Rev. B, 26-May-03
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