SI4965DY ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-59634—Rev. A, 12-Oct-982-1Si4965DYVishay Siliconix
SI4965DY
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si4965DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.021 ©Vss=-4.5V i8.0
-8 0.027 @ VGS = -2.5 v d: 7.0
0.040@VGs=-1.8V i5.8
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -8
Gate-Source Voltage VGS i 8
TA = 25°C l 8.0
Continuous Drain Current (TJ = 150oC)a, b ID
TA = 70°C i 6.4 A
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)' b Is -1.7
TA = 25°C 2.0
Maximum Power Dissipation' b PD W
TA = 70''C 1.3
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 62.5
Maximum Junction-to-Ambienta thJA °C/W
Steady State 93
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
DocumentNumber: 70826
S-59634-Rev. A, 12-Oct-98
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Si4965DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm Vos = VGs, ID = -250 WA -0.45 V
Gate-Body Leakage lsss 1/ros = O V, VGs = i 8 V i 100 nA
VDs = -6.4 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS pA
Vros---64 V,VGS= 0V, TJ=70°C -5
On-State Drain Currenta ID(on) VDS 2_' -5 V, VGS = -4.5 V -20 A
VGs=-4-5 V, ID = -81)A 0.0175 0.021
Drain-Source On-State Resistance" rDS(0n) VGS = -2.5 V, ID = -71) A 0.022 0.027 Q
VGS = -1.8 V, ID = -5.8 A 0031 0.040
Forward Transconductancea gfs Vos = -5 V, ID = -81) A 27 S
Diode Forward Voltagea VSD ls = -1.7 A, VGS = 0 V -1.2
Dynamicb
Total Gate Charge Q9 36 55
Gate-Source Charge Qgs VDS = -4 V, VGS = -4.5 V, ID = -60 A 7.5 nC
Gate-Drain Charge ' 5.0
Turn-On Delay Time td(on) 35 70
Rise Tlme tr VDD = -4 V, RL = 4 Q 45 90
Turn-Ott Delay Time tam ID E -1 A, VGEN = -A.5 V, RG = 6 Q 170 340 ns
Fall Time k 90 180
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 60 90
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70826
S-59634-Reu A, 12-Oct-98
VISHAY
Si4965DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
l l l l
VGS = 5 thru 2.5 v
E 18 l E
e , / 9
Es 12 Es
I 1.5V I
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
E 0.06 C"
g VGS = 1.8 v 3
r': 0.04 " g
o w,,,,,,.,,,.,---" 8
I a,,,,,---''''''''''' VGS = 2.5 V I
"ii' - o
5' 0.02
VGS = 4.5 V
0 6 12 18 24 30
ID - Drain Current(A)
Gate Charge
VDS = 4 V
It 4 - ID-- 8.0 A A
b', 9i
QI'. m
8 3 12 g
5 tO =
fl tf;' 2
s) 6 '25
2 2 I v
I y'" i',-','-
O 8 16 24 32 40
Q9 - Total Gate Charge(nC)
Transfer Characteristics
30 l I
Tc = -55''C
25°C I
18 125°C -
6 ,,,,,,,g;f
0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
O 2 4 6 8
VDs - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.5 l I
VGS = 4.5 V w,,,,,,.'''''
ID = 8.0 A 'w'''''
0.9 //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature CC)
DocumentNumber: 70826
S-59634-Rev. A, 12-Oct-98
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Si4965DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A a 0.06
s "ii',"
g g ( ID = 8.0 A
g (i 0 04
8 g 0.02
000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) N/ss - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l l 30
02 ID = 250 wk 25
E 0.2 20
E /'" g I
a OA / t, 15
> s,rr'''" t
il" 0 O 10 "t
-0A / 5 N
',w'''' S...
-0.2 0
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 0-4 1 0-3
1 o-I 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 93°CNV
3. TJM - TA = PDMZmJAm
4. Surface Mounted
10 100 600
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Document Number: 70826
S-59634-Reu A, 12-Oct-98
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