SI4965DY-T1 ,Dual P-Channel 1.8-V (G-S) MOSFETS-31989—Rev. B, 13-Oct-033V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curren ..
SI4966DY ,20-V (D-S) DualSi4966DYVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFET
SI4965DY-T1
Dual P-Channel 1.8-V (G-S) MOSFET
“3% Si4965DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY otfJ'd
VDs(V) rosm (Q) MA) ttet,', (Fst 6
0.021 © VGS = -4.5 v -8.0 't 9069‘ 3‘9
-8 0.027 @ VGS = -2.5 v -7.0 b'
0.040@Ves= -1.8V -5.8 l."
G. _ G.o_|
Top Wew
D1 D1 D2 D2
Ordering Information: Si4965DY
Si4965DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -8
Gate-Source Voltage VGS i8
TA = 25°C -8.0
Continuous Drain Current (T J = 150°C)a' b ID
TA = 70°C -6.4 A
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction)' b Is -1.7
TA = 25''C 2.0
Maximum Power Dissipation' b PD W
TA = 70''C 1.3
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 62.5
Maximum Junc’tion-to-Ambienta R "C/W
Steady State thJA 93
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
DocumentNumber: 70826 www.vishay.com
S-31989-ReV. B, 13-Oct-03 1
Si4965DY
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 WA -0.45 V
Gate-Body Leakage less VDs = 0 V, VGs = i8 V i 100 nA
1/Ds=-8V,Vss--0V -1
Zero Gate Voltage Drain Current loss liA
VDs---8V,VGs--0V,TJ--70oC -5
On-State Drain Currenta IBM) Vos 2 -5 V, Ves = -4.5 V -20 A
VGS = -4.5 v, ID = -8.0 A 0.0175 0.021
Drain-Source On-State Resistancea roam) vss = -2.5 M b = -7.0 A 0022 0.027 Q
l/cs = .1,8v, ID = -5.8A 0.031 0.040
Forward Transconductancea gfs VDS = -5 V, ID = -8.0 A 27 S
Diode Forward Voltagea I/sro ls = -1.7 A, VGS = 0 V -1.2
Dynamicb
Total Gate Charge Q9 36 55
Gate-Source Charge Qgs VDS = -4 V, VGs = -4.5 V, ID = -8.0 A 7.5 nC
Gate-Drain Charge di 5.0
Turn-On Delay Time tum) 35 70
Rise Time tr VDD = " V, RL = 4 Q 45 90
Turn-Off Delay Time td(ott) ID _ -1 A, VGEN = -4.5 V, RG = 6 Q 170 340 ns
Fall Time t, 90 180
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 60 90
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 70826
S-319B9-F%v. B, 13-Oct-03
VISHAY
Si4965DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30 _ _ _ 30 _ I
VGS = 5 thru 2.5 v l To = -55°C
24 24 1,
/ 2500
Ct.] l /'" _iaC:]
E 18 E 18 125°C -
E' 12 E' 12
' 1.5 V I
- 6 - 6
1 v ss':,';)'
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.08 7000
E 0.06 A
8 k 5000
g VGS = 1.8 V E;
8 g 4000
tr; 0.04 I 8
O m,,,...,,,---'" 8 3000
' a.,.--''''" VGS = 2.5 V I
E, 0 2000
3 0.02
VGS = 4.5 V 1000
0.00 0
6 12 18 24 30 0 2 4 6 8
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.5 l l
7 1/ros=4V VGS=4-5V s,,,,,,-''''''
I 4 |D=8.0 A |D=8.0 A w,,,,,,-''''''
if "g"
, Sli.-,-, 1.2 ,,,,W'''
5 3 ii-',' E 'w''''''
U3 5 g w,,,,,-''''''
s?. O 2 'w''''
P, 2 ' V
3 / ,2 0 9 I
8 16 24 32 40 -50 -25 0 25 50 75 100 125 150
Qg - TotalGate Charge(nC)
Tu - Junction Temperature (°C)
DocumentNumber: 70826
S-31989-ReV. B, 13-Oct-03
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Si4965DY
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.08
TJ = 150''C A
A Cl 0.06
s. 10 m
E s, ( ID = 8.0 A
y, g 0.04
_ ih" 0.02 --
1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) Vas - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 I l 30
0.3 ID = 250 “A 25
E 0.2 20
8 /" g I
= / 1. I
g 0.1 / g 15
i)" o o 10
-0.1 5 t
w,.,-'" 'ss,,,
-O.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.L: _
l. Duty Cycle, D = T
2. Per Unit Base = RNA = 93°C/W
3. TJM - TA = PoMirthoA(t)
Single Pulse 4. Surface Mounted
Normalized Effective Transient
Thermal Impedance
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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4 S-319B9-F%v. B, 13-Oct-03
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