SI4953ADY ,30-V (D-S) Dual FaxBack 408-970-5600S-015393—Rev. B, 17-Jul-002-1Si4953ADYNew ProductVishay Siliconix
SI4953ADY
30-V (D-S) Dual
VISHAY
Si4953ADY
New Product
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.053 @ vGS = -10 v -4.9
0.090 @ VGS = -A.5 V -3.7
Top View
P-Channel MOSFET
V“ 0999
't It,,'; tlt
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGS i 20
TA = 25°C .49 -3.7
Continuous Drain Current (TJ = 150"C)a ID
TA = 70°C -3.9 Al.9
Pulsed Drain Current IDM -30
continuous Source Current (Diode Conduction)" Is -1.7 -0.9
TA = 25"C 2.0 1.1
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 ”C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 52 62.5
Maximum Junction-to-Ambient" RthJA
Steady State 90 110 "C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 32 4O
a. Surface Mounted on 1 "x1"FR4 Board.
DocumentNumber: 71091
S-015393-Rev. B, 17-Jul-00
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Si4953ADY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 11A -1 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V cl: 100 nA
VDs=-30V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDS = -30 V, VGs = 0 V, TJ = 55°C -25
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -1 0 V -30 A
. . VGS = -10 V, ID = -4.9 A 0.045 0.053
Drain-Source On-State Resistancea fDS(on) Q
Vss---4.5 V, ID: -3.7A 0.075 0.090
Forward Transconductancea gfs I/rss = -10 V, ID = -4.9 A 9
Diode Forward Voltagea VSD Is = -1.7 A, VGs = 0 V Ah8 -1.2 V
Dynamic''
Total Gate Charge Q9 15 25
Gate-Source Charge Qgs VDS = -15 V, VGS = -1 0 V, ID = -4.9 A 4 nC
Gate-Drain Charge di 2
Turn-On Delay Time td(on) 7 15
Rise Tlme tr VDD=-15V RL=159 10 20
Turn-Off Delay Time td(ott) ID 3 -1 A, VGEN = -10 V, R6 = 6 Q 40 80 ns
Fall Time k 20 4O
Source-Drain Reverse Recovery Time In IF = -1.7 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width s 300 p5, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
l I ,,,pf, l I T = L,
VGS=10t1ru7Vl /) ",/ 6V C
24 24 25°C
I 5 V \ V
11:" 18 ,/ ‘g 18 y
t / l/ tz 125°C
o fj' o
E 12 y E 12
o // 4 V o
o )/)'f o
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 3 4 5 6
Vos - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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DocumentNumber: 71091
S-015393-Rev. B, 17-Jul-00
VISHAY
Si4953ADY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
2r 0.15
ttt VGS = 4.5 V A
8 0.10 -,,,w'''"
E" m---'''''''"
ij?,- VGS = 10 v
f 0.05 --.
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 15 V
E ID = 4.9 A
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°c
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) — On-Resistance(9) C — Capacitance
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
300 y _ Coss
O 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 4.9 A
1.4 /''''
1.2 ww'''''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 4.9A
2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
DocumentNumber: 71091
S-015393-Rev. B, 17-Jul-00
www.vishay.com . FaxBack 408-970-5600
Si4953ADY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.8 50
0.6 / 40
ID = 250 “A
v 0.4 pr
c s,,,,,,,''''''' E
5 0.2 I t,
.15 ',,,,w'''" £3 20
i)" o o
-0.4 0
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
Single Pulse Power
10-3 10-2 10-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
-ly-1 _
1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 90°CNV
3. TJM - TA = PDMZmJAm
4. Surface Mounted
10 100 600
g Duty Cycle = 0.5
IT, ID
RD 0.2
[ii ' T
8 a 0.1 PDM
Single Pulse
10-4 10-3 10-2 Ity-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
I' a 0.2
8 lg 0.1
Single Pulse
IO-A 10-3 1o-2 10-1
Square Wave Pulse Duration (sec)
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DocumentNumber: 71091
S-015393-Rev. B, 17-Jul-00
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