SI4946EY-T1 ,Dual N-Channel 60-V (D-S)/ 175C MOSFETS-03950—Rev. D, 26-May-032-1Si4946EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4946EY-T1 ,Dual N-Channel 60-V (D-S)/ 175C MOSFETS-03950—Rev. D, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( Ω ) I - Drain Cur ..
SI4946EY-T1 ,Dual N-Channel 60-V (D-S)/ 175C MOSFETS-03950—Rev. D, 26-May-032-2Si4946EYVishay SiliconixTYPICAL CHARACTERISTICS (25C UNLESS NOTED)Outp ..
SI4947ADY ,Dual P-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-00024—Rev. B, 24-Jan-002-1Si4947ADYNew ProductVishay Siliconix
SI4946EY-T1
Dual N-Channel 60-V (D-S)/ 175C MOSFET
Si4946EY
Vishay Siliconix
VISHAY
Dual N-Channel 60-V (D-S), 175°C MOSFET
o tsro' S
PRODUCT SUMMARY 1''il 6 AW“
. ss0 bt
VDs (V) rDS(on) (Q) ID (A) 'isssis'' gsit? Css''''
O.055@VGS=1OV 4.5 ttt Gt''
60 ost'
0.075 @VGS =4.5V 3.9 e
Top IAew
Orderinglnformation: Si4946EY
Si4946EY-T1 (with Tape and Reel) s
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 60
Gate-Source Voltage Was $20
TA = 25°C 4.5
Continuous Drain Current (T J = 175°C)a ID
TA = 70°C 3.8
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" Is 2
TA = 25°C 2.4
Maximum Power Dissipation" PD W
TA = 70°C 1.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RmJA 62.5 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70157 www.vishay.com
S-03950-Rev. D, 26-May-03
Si4946EY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 pA 1 V
Gate-Body Leakage less Vos = 0 V, VGS = l 20 V d: 100 nA
VDs=60V,VGs=0V 2
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, T: = 55°C 25 WA
On-State Drain Currentb IBM) Vos = 5 V, VGS = 10 V 20 A
VGs = 10 V, ID = 4.5 A 0.045 0.055
Drain-Source On-State Resistanceb rDS(on) Q
V63 = 4.5 V, ID = 3.9 A 0.055 0.075
Forward Transconductanceb gfs VDS = 15 V, ID = 4.5 A 13 S
Diode Forward Voltageb VSD ls = 2 A, VGS = O V 0.9 1.2
Dynamica
Total Gate Charge as, 19 30
Gate-Source Charge Qgs VDs = 30 V, VGS = 10 V, ID = 4.5 A 4 nC
Gate-Drain Charge di 3
Gate Resistance R9 1 3.6 Q
Turn-On Delay Time tdwn) 13 20
Rise Time tr VDD = 30 V, RL = 30 Q 11 20
Turn-Off Delay Time tdmm ID _ 1 A, VGEN = 10 V Re = 6 Q 36 60 ns
Fall Time tf 11 20
Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 Alps 35 60
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
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Document Number: 70157
S-03950-Rev. D, 26-May-03
VISHAY
Si4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30 I _ 30 I _ f
VGS=10thru5V TC|='55C‘
24 24 25°C jd
ig" 4 V Ct 150 C
E 18 E 18
E' 12 y E 12
- 6 - 6
O 1 2 3 4 5 0 1 2 3 4 5 6
Vros - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.150 1400
0.125 1200
V C? 1000
g 0.100 sc.?.;
25 g 800
0:? 0.075 E
6 8 600
I 0.050 '
"ic," VGs = 10 V o 400
h 0025 200
0.000 0
O 6 12 18 24 30 0 12 24 36 48 60
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
10 Gate Charge On-Resistance vs. Junction Temperature
1 1 1 1
Vos=30V VGs=10V w'''''
ID=4.5A ID=4.5A I
(D / Cl
f?? v /
= m 1.6
il 6 ut E s
2 E fe I
D V) =
o a) m 1.3
cn ty E
6 e t, ,,,p'''"
Ir 4 C) a
Iii I 1.0
© "ii,"
L) 2 if ',.,re'''"
o " 0.7 //
O 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 175
09 - TotaIGate Charge(nC)
To - Junction Temperature (°C)
Document Number: 70157
www.vishay.com
S-03950-Rev. D, 26-May-03
Si4946EY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance
vs. Gate-to-Source Voltage
20 0.10
A 0.08
A 10 Cl
g g 0.06 ID = 4.5 A
Q g 'ss,,,,,.
g a; m---,
(‘3) 6 0.04
I T = 175°C A
(D J s5
b' 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s,.
-0.0 l
slii.? ID = 250 11A 30 l
0 -0.2
E 'N g l
> "N. it
ii 0 g 20
> -0.6 i N.
"N, IO "sc,
-0.8 \ "s,
-1.0 0
-50 -25 o 25 50 75 100 125 150 175 0.01 0.1 1 10 30
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
g 8 0.2
= g Notes:
.2 CL 0.1
5: 'tu
Ite E 0.1
TY g -5 tl F--
3 f? - 12 - t
"z-sr- l, Duty Cycle, D-- il
F, 2. Per Unit Base = Rth0A = 625'C/W
a 3. To, - TA = PDMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
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2.4 S-03950-Rev. D, 26-May-03
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