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SI4940DY
Dual N-Channel 40-V (D-S) MOSFET
VISHAY
Si4940DY
New Product Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q)
0.036 V =1OV
40 @ GS
0.059 @ N/ss = 4.5 v
FEATURES
. TrenchFET© Power MOSFET
ID (A) APPLICATIONS
j: . Automotive Airbags
Top IAew
MA GZOJ
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 40
Gate-Source Voltage VGS 120
TA = 25°C 5.7 4.2
Continuous Drain Current (TJ = 150°C)3 ID
TA = 70°C 4.5 3.4
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" ls 1.8 os
TA = 25°C 2.1 1.1
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50 60
Maximum Junction-to-Ambienta RNA
Steady State 90 110 oc/w
Maximum Junction-to-Foot (Drain) Steady State Rm}: 28 34
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71649 www.vishay.com
S-04277-Rev. B, 16-Jul-01
Si4940DY
VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
Vos=32V,VGs=OV 1
Zero Gate Voltage Drain Current IDSS WA
VDS=32V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 30 A
N/ss = 10 V, ID = 5.7A 0.03 0.036
Drain-Source On-State Resistancea rDs(on) Q
b1ss=4.5V, ID=4.4A 0.048 0.059
Forward Transconductancea 9ts Vos = 15 V, ID = 5.7 A 12 S
Diode Forward Voltage" I/sro Is = 1.8 A, Veg = 0 V 0.8 1.1
Dynamicb
Total Gate Charge % 9.0 14
Gate-Source Charge Qgs VDs = 20 V, VGS = 10 V, ID = 5.7 A 1.8 nC
Gate-Drain Charge di 2.3
Gate Resistance Re 1.0 Q
Turn-On Delay Time thon) 7 15
Rise Time tr VDD = 20 V, RL = 20 Q 12 25
Turn-Off Delay Time thott) ID _ 1 A, VGEN = 10 V, Re = 6 Q 15 30 ns
Fall Time tf 8 15
Source-Drain Reverse Recovery Tlme trr IF = 1.8 A, dildl = 100 Alps 35 7O
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30 _ _ 30
, VGS=101hru6V
Ct 20 y ig" 20 /
8 15 , 5 15
S 4 V S
I 10 1 I 10
f K' f Tc = 125°C /
25°C I
3 V \/
0 1 2 3 4 5 0 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71649
S-04277-Rev. B, 16-Jul-01
VISHAY
Si4940DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.08
I",-'; VGS = 4.5 V
F, 0.06
Ill "e'''''
C) r,,..,,,,---'"''''
I 0.04 VGS = 10 V -
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate Charge
10 _ /
VDS = 20V
lro=5.7A /
s,,/''"
V GS — Gate-to-Source Voltage (V)
O 2 4 6 8 IO
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
Capacitance
\ss,s, Ciss
"ss.. Coss
100 Crss
C — Capacitance (pF)
O 8 16 24 32 4O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0 I _
Vss=101/
A |D=5.7A
'r,'-,-'', 12 /
E? E /
Tii. w,-,-'"
l 08 /
:5, wee''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.10 I
ID = 3 A
iii. 0.08
g I b = 5.7A
E 0.06
JP 0.02
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71649
S-04277-Rev. B, 16-Jul-01
www.vishay.com
Si4940DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 "ss,, 50
0.2 "ss, 40 m
ID = 250 “A I
ty -0.0 1
g it 30
'l)..] N. o? 20 l
0 -0.4
> Ns Il
N. 10 \
-0.6 N
'ss, W 's,,
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g 8 0.2
ilr', ' th1 T
g a 0.1 PDM
(i,' f3 0.05 l t
g -21 r t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 90°CIW
Single Pulse 3. TJM - TA = PumzmwU
4. Surface Mounted
Ity-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
I' a 0.2
if',' g
tt E 0.1
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71649
4 S-04277-Rev. B, 16-Jul-01
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