SI4936ADY ,Dual N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-00125—Rev. A, 07-Feb-002-1Si4936ADYNew ProductVishay Siliconix
SI4936ADY
Dual N-Channel 30-V (D-S) MOSFET
VISHAY
New Product
Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY tot
VDs (V) rosmn) (Q) ID (A) etfJ'9s'
0.036@Vss=10V 5.9 'tlt. ,see
0.053@VGS = 4.5V 4.9
D1 D2 D2
G1 oJ G2 OJ
Top View
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V03 30 V
Gate-Source Voltage VGS l 20
. . TA = 25°C 5.9 4.4
Continuous Drain Current (T J = 15ty'C)a ID
TA = 70°C 4.7 3.6 A
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)" ls 1.7 0.9
TA = 25°C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50 62.5
Maximum Junc’tion-to-Ambienta RthJA
Steady State 90 110 °CIW
Maximum Junction-to-Foot (Drain) Steady State RIM: 32 40
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71132
S-00125-Rev. A, 07-Feb-00
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 1.0 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
Vros=24V,Vss--0V,Tu=55oC 5
On-State Drain Current3 |D(on) VDS 2 5 V, VGS = 10 V 30 A
. . VGS = 10 V, lo = 5.9 A 0.032 0.036
Drain-Source On-State Resistances rDS(on) Q
VGS = 4.5 v, ID = 4.9 A 0.042 0.053
Forward Transconductancea gfs Vos = 15 V, ID = 5.9 A 15 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = O V 0.8 1.2
Dynamic"
Total Gate Charge Q9 13 20
Gate-Source Charge Qgs Vos = 15 V, VGS = 10 V, ID = 5.9 A 2.3 nC
Gate-Drain Charge ' 2.0
Turn-On Delay Time 1d(on) 6 12
Rise Tlme tr VDD=15V1 RL=159 14 25
Turn-Ott Delay Time td(off) '0 E 1 A, VGEN = 10 V, RG = 6 Q 30 60 ns
Fall Time tf 5 10
Source-Drain Reverse Recovery Time trr II: = 1.7 A, di/dt = 100 A/gs 3O 60
a. Pulse test; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 l l I l 30
./ VGs-10thru5V T"'"
24 /A, 4 V 24 25°C _ l
g 18 E 18 I
bc l/ 1: 125°C
E 12 E 12
_ 3 V -
O 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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Document Number: 71132
S-00125-Rev. A, 07-Feb-00
VISHAY
Si4936ADY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
2r 0.06 I
g s..,.-,-''''"
Ea' VGS = 4.5 V
g _.').....,,------'''"''
ttt -------"""
8 0.04 VGS = 10 V -
f 0.02
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
10 l pr
VDS = 15 V
E ID = 5.9 A s,/''''
ifi 4 /
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) — On-Resistance(9) C — Capacitance
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
800 ts,.,., Ciss
200 i oss
O 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 5.9 A
1.2 v,,,,,,,'''''''
0.8 1/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 5.9 A
0.04 'ss.
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71132
S-00125-Rev. A, 07-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4936ADY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "ss,
"N,, ID = 250 “A
g -0.0 N
8 E 30
5 -0 2 'N. a
> "N g
ef.?.: EL 20 N
> 0.4 \
-0.6 ttu 10 \
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
E t1 _
ly, -ly-1 ta
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 90°CNV
V 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
8 E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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b4 S-00125-Rev. A, 07-Feb-00
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