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SI4927DYVISHAYN/a172avaiDual P-Channel, 30-V (D-S) MOSFET
SI4927DYSIEMENSN/a1500avaiDual P-Channel, 30-V (D-S) MOSFET


SI4927DY ,Dual P-Channel, 30-V (D-S) MOSFETSi4927DYVishay SiliconixP-Channel 30-V (D-S) Battery Switch 

SI4927DY
Dual P-Channel, 30-V (D-S) MOSFET
VISHAY
Si4927DY
Vishay Siliconix
P-Channel 30-V (D-S) Battery Switch
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.028 @ Vss = -10 v cl: 7.4
_ 0.045 @ VGS = -A.5 v i: 5.8
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -30
Gate-Source Voltage VGS i 20
TA = 25°C l 7.4
Continuous Drain Current (TJ = 150°C)av b ID
TA = 70°C d: 5.8 A
Pulsed Drain Current IDM i40
Continuous Source Current (Diode Conduction)' b ls -2.1
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70''C 1.6
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t = s 10 sec 50
Maximum Junction-to-Ambient" RthJA °CNV
Steady State 75
a. Surface Mounted on FR4 Board.
b. t= s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70808
S-59519-Rev, B, 04-Sep-98
www.vishay.com . FaxBack 408-970-5600
Si4927DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm Vos = VGs, ID = -250 p.A -1 V
Gate-Body Leakage lsss VDS = 0 V, VGs = i 20 V i 100 nA
Zero Gate Voltage Drain Current IDSS N/css = -24 V, VGS = 0 V -1 pA
Vros=-24V,Vss=0V,TJ=55''C -25
On-State Drain Currenta ID(on) VDS 2_' -5 V, VGS = -10 V -30 A
VGS = -1 0 V, ID = -7.4 A 0.022 0.028
Drain-Source On-State Resistancea rDs(0n) Q
VGS = -4.5 V, Irs = -53 A 0.034 0.045
Forward Transconductancea gfs VDS = -15 V, ID = -7.4 A 15 S
Diode Forward Voltage" VSD ls = -2A A, VGS = 0 V Ah73 -1.2 V
Dynamicb
Total Gate Charge Q9 38 60
Gate-Source Charge Qgs VDS = -15 V, N/ss = -1 0 V, ID = -7.4 A 8 nC
Gate-Drain Charge di 6.8
Turn-On Delay Time tam”) 13 25
Rise Time tr VDD = -15 V, RL = 15 g 9 20
Turn-Off Delay Tlme tum) Ir, E -1 A, VGEN = -1 0 v, R6 = 6 Q 75 120 ns
Fall Time tf 42 70
Source-Drain Reverse Recovery Time trr IF = Al.1 A, di/dt = 100 Alps 50 90
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70808
S-59519-Rev. B, 04-Sep-98
VISHAY
Si4927DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
a 0.16
75 0.12
I 0.08
f 0.04
Output Characteristics
VGS = 5thru 10V
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS=10V -
ID - Drain Current (A)
Gate Charge
Vos = 15 v /
_ ID = 7.4 A I
8 16 24 32 40
% - Total Gate Charge (nC)
rosmn) — On-Resistance(
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC = 125°C
25 C \l/ -551
0 1 2 3 4 5 6
Was - Gate-to-Source Voltage(V)
Capacitance
3200 I
2400 k
\\C°ss
""----....
0 6 12 18 24 30
VDS - Drain-to-Source Voltage(V)
1 6 On-Resistance vs. Junction Temperature
VGS = 10 V s,,,,,,,,,''''''''
1.4 _ ID = 7.4 A /
ld? ww'''''''''''''''
0.8 /,/
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70808
S-59519-Rev, B, 04-Sep-98
www.vishay.com . FaxBack 408-970-5600
Si4927DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40 0.10
a 0.08
Ct T J = 150°C ir;
2 10 fsi. 0.06
E ll;' ID = 7.4 A
g o 0.04
0) I 'hs,,,,.,.....
tD o5 "m--...-,
JI 0.02
o 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 l l 60
0.6 ID = 250 0A /''
j,i.8 0.4 l
t'c,e', g \
":ir,-s, 0.2 / g 30 k
A " o N,
e, il. N
>8 0.0 N.
-0.2 "s,
"sa,,.,
-0.4 o
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RmJA = 75°C/W
3. TJM - TA = PDMZmJAm
4. Surface Mounted
100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 70808
S-59519-Rev. B, 04-Sep-98
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