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SI4924DY
Asymetrical Dual N-Channel 30-V (D-S) MOSFET
VISHAY
Si4924DY
Vishay Siliconix
Asymetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.022 @VGs=10V 6.3
Channel-1
0.030 @ VGS = 4.5 v 5.4
30 0.0105@VGS=10V 11.5
Channel-2
0.0145@VG3=4.5V IO
Top bfew
Ordering Information: Si4924DY
Si4924DY-TI (with Tape and Reel)
N-Channel 1
MOSFET
D2 D2 D2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Channel-l Channel-2
Parameter Symbol 10 secs Steady State 10 secs l Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGs i 20
TA = 25°C 6.3 5.3 11.5 8.6
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C 5.4 4.2 9.5 6.9
Pulsed Drain Current IDM 30 40
Continuous Source Current (Diode Conduction)" ls 1.3 0.9 2.2 1.15
TA = 25°C 1.4 1.0 2.4 1.25
Maximum Power Dissi ationa P W
p TA = 70°C D 0.9 0.64 1.5 0.80
Operating Junction and Storage Temperature Range T J, Tstg -65 to 150 I
THERMAL RESISTANCE RATINGS
Channel-l Channel-2
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 72 90 43 53
Maximum Junction-to-Ambienta Rth0A
Steady-State 100 125 82 100 0 CAN
Maximum Junction-to-Foot (Drain) Steady-State Rthoc 51 63 25 30
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71163 www.vishay.com
S-03950-Rev. B, 26-May-03
Si4924DY V:lSHAY
Vishay Siliconix
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
G t Th h ldV lt v v v I 250 A Ch-l 0.8 v
a e res o o a e = , = u
9 GS(th) DS GS D Ch-2 0.8
Ch-l i100
Gate-Bod Leaka e I V = 0 V, V = iZOV nA
Y g GSS DS GS Ch-2 d: 100
v --24UV --ov Ch-l 1
DS , GS Ch-2 1
Zero Gate Voltage Drain Current bss Ch 1 15 11A
v =24V,V =0V,T=85°C -
DS GS J Ch-2 15
On State Drain C rrentb I V 5 V V 10 V Ch-1 20 A
- l u = , =
D(on) DS GS Ch-2 30
VGS = 10 V, ID = 6.3 A Ch-l 0.018 0.022
V63: 10 V, I0: 11.5A Ch-2 0.0088 0.0105
Drain-Source On-State Resistanceb rDS(on) Q
Vss = 4.5 V, ID = 5.4 A Ch-1 0.024 (h030
VGS = 4.5 V, ID = 10 A Ch-2 0.0115 0.0145
b fs-- 15 V, ID=6.3A Ch-1 17
orward ransconductance gfs Vros = 15V, ID = 11.5 A Ch-2 30 S
Is=1.3A,VGs=OV Ch-l 0.7 1.1
Diode Forward Voltage? VSD V
ls = 2.2 A, VGS = o v Ch-2 0.72 1.1
Dynamic"
Ch-l 8.0 12
Total Gate Charge % 25 5 35
Channel-I Ch-2 .
VDs=15V, VGS= 5V,ID= 6.3A Ch-1 1.75
Gate-Source Charge Qgs nC
Channel-2 Ch-2 4.5
VDS= 15 V, VGs=5V,lo=-11.5A Ch-1 3.2
Gate-Drain Char e Q
g gd Ch-2 11.5
Ch-1 1.5 6.1
G t R . t R Q
a e esus ance g Ch-2 0.5 2.4
Ch-1 10 20
T rn-On Dela Time t
u y I d(on) Ch-2 15 30
Channel-l
Rise Time tr VDD = 15 v, RL = 15 Q Ch-l 5 10
|Ds1A,VGEN=1O\/,RG=6§2 Ch-2 11 20
Channel-2 Ch-1 26 50
Turn-Off Delay Time td(0ff) VDD = 15 V, RL = 15 Q Ch-2 58 100 ns
ID _ 1A,VGEN= 10V, Rs=6Q
Ch-l 8 16
Fall Time 11
Ch-2 53 100
IF = 1.3 A, di/dt = 100 Alps Ch-1 30 60
Source-Drain Reverse Recovery Tune In .
IF = 2.2 A, di/dt = 100 pA/ps Ch-2 42 70
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 ps. duty cycle s 2%.
www.vishay.com Document Number: 71163
2 S-03950-Rev. B, 26-May-03
VISHAY
Si4924DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
ID — Drain Current(A)
rDS(on) - On—Resistance( Q)
VGS - Gate—to—Source Voltage(V)
Output Characteristics
Transfer Characteristics
l l 30
V68 =10thru4V
3V i,-f:
-""" 5 18 I
cu Tc = 125 C
_ 6 l _
25°C /J,
IV 2V vt)jf -55°C
l \ o I #14 1 l
2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDs - Drain-to-Source Voltage(V) I/ss - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
1000 t
3 Fs.. Ciss
J2. 600
VGS = 4.5 v 8 "t
l/ss =10V I 400 l 'N,
O "ss.. Coss
200 Crss
a--..-,
6 12 18 24 30 O 6 12 18 24 30
ID - Drain Current(A) VDS - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
_ 1.8 _ _
VDS=15V VGs=10V
lrr=6.3A A 1.6- |D=6.3A
E a ll "
a g 1/
f ke N 1.2
s: g /
l V 1.0
,__/ g 0.8 -
',,w'''''
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - TotalGate Charge(nC)
TJ - Junction Temperature (°C)
Document Number: 71163
S-03950-Rev. B, 26-May-03
www.vishay.com
Si4924DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
Normalized Effective Transient
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40 0.10
A a 0.08
f? T: = 150°C 2;
8 10 'd
g It,'-'; 0.06
fn' 0 0.04
' L ID = 6.3 A
tn :5. N,
5' 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
A 0.2 ID = 250 0A
§ -0.0 g 60
g -0.2 "s, g N
E "s CL
0 -0.4 u
> 's, N
-O.6 'Nc N,
"N, 20 \
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E Notes:
a 0.1 PDM
-lt-I F-
1. Duty Cycle, D = T2
2. Per UnitBase = RmJA = 100°C/W
. 3, TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10c3 10-2 10-1 1
Square Wave Pulse Duration (sec)
100 600
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Document Number: 71163
S-03950-Rev. B, 26-May-03
VISHAY Si4924DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL"
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
s a 0.2
lt E 0.1
8 tg 0.1
(i' E 0.05
fl 0.02
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL-z
Output Characteristics Transfer Characteristics
50 I 50
I VGS=1Othru4V
Ct 3 v i
E 30 E 30
o /'''"" o
E' 20 E 20
o 0 TC = 125°C
0 co l
_ 10 _ 10
1, 2 v 25 C "sss4
l -55°C
0 --- I 0 I
O 2 4 6 8 10 O 1 2 3 4
Vros - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.020 3500
Cl 0.016
8 Is, 2500
g VGS = 4.5 V 8
ii 0.012 1 o5. 2000
n: I Q
é VGS = 10 V CL
, 0.008 0 1500
gr, 0 1000
m 0.004
500 Crss
0.000 0
O 10 20 30 4O 50 0 5 IO 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71163 www.vishay.com
S-03950-Rev. B, 26-May-03 5
Si4924DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-2
Gate Charge
On-Resistance vs. Junction Temperature
10 / l
A VDS=15V VGS=10V /
ty |D=11.5A / A |D=11.5A /
a, 8 7 Cl 1.4 _-
5’ i; "
g 8 ',,,W'''
b' 6 / it' E 1.2 4
a 2% 'TT, ',,,pr''''''"
S'. O o
g 4 " l E 1.0
.m il" s,,,,,,-'''''
o 2 g L, 0.8 A
0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.05
a 0.04
g.'. V
E T J = 150°C 8
5 10 "a' 0.03
c?) O 0.02
I J, ID = 11.5 A
f o 01 '
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 100 l
0.2 "ss, (
's, ID = 250 WA 80 l
a) -0.0
g E 60 i,
g -0.2 "sc,,,, g I
g." D.
?o’ "ss, 40 t
> -0.4 N, \
-0.6 \ N
N 's,,
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature( C) Time (sec)
www.vishay.com DocumentNumber: 71163
S-03950-Rev. B, 26-May-03
VISHAY
Si4924DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-2
Duty Cycle = 0.5
Ji g 0.2
, 'si,
'a,' E 0.1
E E 0.1
Single Pulse
10-4 10-3
.5 Duty Cycle = 0.5
sts 'll
/:le' E 0.2
if',' g
'li? 0.1
EB 0.1
‘7; _ 0.05
Single Pulse
10-4 10-3
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L: _
l. Duty Cycle, D = T2
2. Per Unit Base = RmJA = 82°CNV
3. TJM - TA = PDuzthoA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71163
S-03950-Rev. B, 26-May-03
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