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SI4920DY
Dual N-Channel, Logic Level, PowerTrench MOSFET
January 2001 Si4920DY â Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features 6 A, 30 V. R = 0.028 W @ V = 10 V These N-Channel Logic Level MOSFETs are DS(ON) GS R = 0.035 W @ V = 4.5 V. produced using Fairchild Semiconductor's DS(ON) GS advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate charge (typical 9 nC). resistance and yet maintain superior switching performance. High performance trench technology for extremely low These devices are well suited for low voltage and R . DS(ON) battery powered applications where low in-line High power and current handling capability. power loss and fast switching are required. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D2 D2 5 4 D1 D1 6 3 2 7 G2 S2 1 G1 8 pin 1 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter Si4920DY Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) 6 A D - Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 2 W D (Note 1b) 1.6 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R qJC © 2001 Fairchild Semiconductor International Si4920DY Rev.A 4920
