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SI4894DY
N-Channel 30-V (D-S) MOSFET
VISHAY Si4894DY
Vishay Siliconix
N-Channel 3o-v (D-S) MOSFET
PRODUCT SUMMARY $639
VDs (V) rosm, (C2) low “Q Its
30 0.012 @ VGS = 10 v 12.5 ett bos
0.018 @ VGS = 4.5 v 10.2 K , bet
s D G OJ
Top View S
Ordering Information: Si4894DY -
Si4894DY-T1 (with Tape and Reel) N Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS i20
TA = 25"C 12.5 8.5
Continuous Drain Current (T J = 150"C)'a ID
TA = 70°C 10 6.8 A
Pulsed Drain Current los, 20
Continuous Source Current (Diode Conduction)a ls 2.7 1.3 A
TA = 25°C 3.0 1.4
Maximum Power Dissipationa PD W
TA = 70°C 1.9 0.9
Operating Junction and Storage Temperature Range Ts Tstg ~55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 42
Maximum Junction-to-Ambienta RNA
Steady State 73 90 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rm”: 16 20
a. Surface Mounted on l" x I" FR4 Board.
Document Number: 71162 www.vishay.com
S--31989-Rev. D, 13-Oct-03 1
Si4894DY
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 LA 0.8 V
Gate-Body Leakage less VDS = o V, VGs = i20 V ch 100 nA
VDs--30V,VGs--0V 1
Zero Gate Volta e Drain Current I
g DSS VDs--30V,VGs--0V,To--550C 5 ”A
On-State Drain Current' |D(on) Vos 2_' 5 V, Vas = 10 V 30 A
VGS=10 V,ID--12.5A 0.010 0.012
Drain-Source On-State Resistancea rDS(on) Q
sz = 4.5 v, ID = 10.2 A 0.015 0.018
Forward Transconductancea gfs Vos = 15 V, ID = 12.5 A 30 S
Diode Forward Voltagea Vso Is = 2.7 A, VGS = 0 V 0.7 1.1
Dynamicb
VDs--15V,VGs--5V,lD--12.5A 11.5 17
Total Gate Charge A,
Gate-Source Charge Qgs Vos = 15 V, N/ss = 10 V, ID = 12.5 A 3.0
Gate-Drain Charge di 4.5
Gate Resistance R9 1 2.4 Q
Turn-On Delay Time tis(on) 10 20
RiseTime tr VDD--15V,RL--15Q 5 10
Turn-Off Delay Time td(oii) ID _ 1 A, VGEN = 10 V, HG = 6 C2 30 60 ns
Fall Time tt 10 20
Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 NPs 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 I I 30
y VG3=101hrU4L/
25 f 25
"ii.'] 20 g 20 l,
5 15 8 15
.5 'e''"''''' .E //
l 10 ' IO T3 = 125 c
5 5 25 C "'ssd
2 V -55”C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Vros - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage(V)
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Document Number: 71162
S--31989-Rev. D, 13-Oct-03
VISHAY
Si4894DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
E 0.020
o'li. VGS = 4.5 V
T,' 0.015 -e---
6 VGS = 10 V
' 0.010
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate Charge
10 I I .
Vros = 15 V
E ID = 12.5 A
, d,,,,,?'''
0 4 8 12 16 20 24
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu = 150°C
ls - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance(§2) C - Capacitance(pF)
(Normalized)
roman) - On-Resistance (g2)
Capacitance
O 5 1O 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l I
VGs=1OV
ID--12.5A
1.2 w'''''
0.8 l/
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.04 ID = 12.5 A
0.03 1
0 02 N
Ns,.,.
0.01 "'---..._,
o 2 4 6 a 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71162
S--31989-Rev. D, 13-Oct-03
www.vishay.com
Si4894DY
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 "ss, 30 l
0.2 "s, 24
ID = 250 “A I
-o.o N
Power (W)
-0.4 "ss, \
"N, tic
-O.6 'ss,
N """ss.
-O.8 0
-50 -25 0 25 50 75 100 125 150 10'2 IO-l 1 10 100 600
VGS(th) Variance (V)
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ll' Duty Cycle = 0.5
"if',' g Notes:
g a 0.1 PDM
E (E I
E t1 _
a 1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 73°C/W
. 3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
ltr' 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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4 S--31989-Rev. D, 13-Oct-03
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