SI4890DY ,N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-56948—Rev. A, 01-Feb-992-1Si4890DYVishay Siliconix
SI4890DY
N-Channel 30-V (D-S) MOSFET
VISHAY
Si4890DY
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A) 'tll
30 0.012@VGS=10V cell 9
0.020@VGS=4.5V 19
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30 V
Gate-Source Voltage VGS cl: 25
TA = 25°C d: 11
Continuous Drain Current (TJ = 150°c)a, D ID
TA = 70°C i 9
Pulsed Drain Current (10 us Pulse VWdth) IDM d: 50
Continuous Source Current (Diode Conduction)' b ls 2.3
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambient (MOSFETP RthJA °CNV
Steady State 70
a. Surface Mounted on FR4 Board,
b. t s 10 sec.
Document Number: 70855
S-56948-Rev. A, 01-Feb-99
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Si4890DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm VDS = VGS, ID = 250 0A 0.8 V
Gate-Body Leakage less VDS = O V, VGS = ck 20 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V.VGS=0V,TJ=55°C 5
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 40 A
. . l/ss = 10 V, ID = 11 A 0.0098 0.012
Drain-Source On-State Resistance" roam) Q
VGS = 4.5 V, ID = 9 A 0.0164 0.020
Forward Transconductancea gis Vos = 15 V, b = 11 A 21 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = O V 0.71 1.1 V
Dynamic"
Total Gate Charge Qg 14.2 20
Gate-Source Charge Qgs Vos = 15 V, VGs = 5.0 V, ID = 11 A 3.3 I
Gate-Drain Charge di 6.6
Turn-On Delay Time td(on) 13 20
Rise Tlme tr VDD=15V1 RL=159 8.5 15
Turn-Off Delay Time td(off) lo E 1 A, VGEN = 10 V, Rs = 6 Q 35 53 ns
Fall Time tf 17 26
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/gs 35 70
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-56948-Rev. A, 01-Feb-99
VISHAY
Si4890DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
50 l I
I /"'"' Vss=10thru4V
t5 20 3 v
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
E 0.04
g 0.03
O VGS = 4.5 V
I 0.02 w.--""'""
8 v.33 = 10 v
0 10 20 30 4O 50
ID - Drain Current (A)
Gate Charge
A VDS = 15 V
ty ID = 11 A
"isl' 4
0 5 1O 15 20 25
Q9 - Total Gate Charge (nC)
rDS(0n) — On—Resistance( g)
I D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC=125°C /7
25°C stty -55''C
1 1i,2ge l l
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage(V)
Capacitance
0 6 12 18 24 30
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
V65: 10V
1.6 - ID=11A //
1.2 4/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70855
S-56948-Rev. A, 01-Feb-99
www.vishay.com . FaxBack 408-970-5600
Si4890DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
a 0.08
3‘: T: = 150°C ii"
E 75 0.06 ID = 11 A
'sb' 5
8 1 0.04
f 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 50
(h2 \ ID = 250 “A l
g -0.0 g 30
g -0.2 \ t N
2 's CL \
tc.' "s. 20
8 -0d N
> 'ttts,
-0.6 10 'N
'ss,, N...
-0.8 \\-___
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
I', Duty Cycle = 0.5
RD 0.2
..,'lz'. a
8 g Notes:
8 F, 0.1 PDM
LY (E l
g -lt-1 h
2 l. Duty Cycle, D = -
2. Per Unit Base = Rth0A = 70°CNV
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
IO-A 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
100 600
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Document Number: 70855
S-56948-Rev. A, 01-Feb-99
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