SI4884DY ,N-Channel Reduced Qg, Fast Switching MOSFETS-03950—Rev. C, 26-May-032-1Si4884DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SI4886DY ,N-Channel Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-00206—Rev. A, 21-Feb-002-1Si4886DYNew ProductVishay Siliconix
SI4884DY
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si4884DY
N-Channel Reduced Qg,
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
30 0.0105@VGS=10V 12
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Ordering Information: Si4884DY
Si4884DY-TI (with Tape and Reel)
eo_l.':
N-Channel MOSFET
Vishay Siliconix
Fast Switching MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS i20
TA = 25°C 12
Continuous Drain Current (TJ = 150°c)a, b ID
TA = 70''C 10
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)", b Is 2.3
TA = 25°C 2.95
Maximum Power Dissipation' b PD W
TA = 70°C 1.9
Operating Junction and Storage Temperature Range T J, Tsta -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 42
Maximum Junction-to-Ambient (MOSFET)a RNA
68 80 'C/W
. . Steady State
Maximum Junction-to-Foot RthJF 18 23
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70946 www.vishay.com
S-03950-Rev. C, 26-May-03
Si4884DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 40 A
I/ss =10 V, '0 = 12A 0.0086 0.0105
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID: 10A 0.0135 0.0165
Forward Transconductancea 9ts Vos = 15 V, ID = 12 A 26 S
Diode Forward Voltage" I/sro Is = 2.3 A, Veg = 0 V 0.74 1.1
Dynamicb
Total Gate Charge % 15.3 20
Gate-Source Charge Qgs VDs = 15 V, VGS = 5.0 V, ID = 12 A 5.8 nC
Gate-Drain Charge di 4.8
Gate Resistance R9 05 2.2 Q
Turn-On Delay Time thon) 13 20
RiseTime tr VDo=15V,RL=15Q 7 12
Turn-Off Delay Time tam) ID _ 1 A, VGEN = 10 V, Re = 6 Q 55 82 ns
Fall Time tf 16 30
Source-Drain Reverse Recovery Tlme trr IF = 2.3 A, dildl = 100 Alps 40 70
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 VGS = 10 thru 4 V 40
ig" Ct
E 30 E 30
E 20 E 20
l 3V I
- 10 - 10
0-21/ -55°C
0 _ 0 l
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com Document Number: 70946
2-2 S-03950-Rev. C, 26-May-03
VISHAY
Si4884DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
I’Dsmn) - On-Resistance ( Q )
0 10 20 30 4O 50
ID - Drain Current(A)
Gate Charge
10 l l
I/os = 15 V
8 - ID = 12 A ,,,,,/'
VGS - Gate-to-Source Voltage(V)
0 5 10 15 20 25 30
09 - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
Is - Source Current(A)
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDs(on) - On-Resistance(g)
rDS(on) - On-Resistance(Q
C — Capacitance (pF)
(Normalized)
Capacitance
2000 's. Ciss
a--.-,
1000 "Iss,
500 I 'ss-s......,
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage(V)
1 8 On-Resistance vs. Junction Temperature
1.6 _-_ VGs=10V /
ID = 12 A o,,,,,,,-''"
1.2 //
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
N ID=12A
_s,,,s__'
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 70946
S-03950-Rev. C, 26-May-03
www.vishay.com
Si4884DY V:lSHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 l l 60
0.4 ID = 250 “A 50 y
0.2 N. l
E 40 t
8 -0.0 g l
'3 'tc E 30
g -0.2 's, E
E 'N. \
ih" -0.4 'ts
f 'ssc 20
-0.6 \ 'N,
N. 10 \ _
-0.8 'm '
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 IO 30
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
g E 0.2
"if',' E
it ' th1 T
g a 0.1 PDM
(i,' fE 0.05 l
g -21 t2 t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 68°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
Il a 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70946
2.4 S-03950-Rev. C, 26-May-03
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