SI4882DY ,N-Channel Reduced Qg, Fast Switching MOSFETSi4882DYNew ProductVishay SiliconixN-Channel Reduced Q , Fast Switching MOSFETg
SI4882DY
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si4882DY
New Product
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.0105@VGS=10V cell
0.0205 @ VGS = 4.5 v :t 8
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS i 25
TA = 25°C l 11
Continuous Drain Current (TJ = 15ty'C)a, b ID
TA = 70 I ck 9
Pulsed Drain Current IDM l 50
Continuous Source Current (Diode Conduction)' b Is 2.3
TA = 25''C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 50
Maximum Junction-to-Ambient (MOSFET)a Rth0A
68 80 °C/W
Steady State
Maximum Junction-to-Foot RthJF 19 25
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70878
S-00271-Rev. A, 26-Apr-99
www.vishay.com . FaxBack 408-970-5600
Si4882DY
Vishay Siliconix
New Product
VISHAY
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 IIA 1.0 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDS=24V,VGS=OV 1
Zero Gate Voltage Drain Current loss WA
Vros=24V,Vss--0V,Tu=55oC 5
On-State Drain Current3 IMO") Vos 2 5 V, VGS = 10 v 40 A
. . Kas-- 10 V, ID = 11 A 0.0087 0.0105
Drain-Source On-State Resistances rDS(on) Q
VGS = 4.5 V, ID = 8 A 0.017 0.0205
Forward Transconductancea gfs Vos = 15 V, ID = 11 A 26 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = O V 0.70 1.1
Dynamic"
Total Gate Charge O9 13.5 17
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, ID = 11 A 3.9 nC
Gate-Drain Charge ' 6.0
Turn-On Delay Time td(on) 13 20
RiseTIme tr Vcxo=15V,Ru=15Q 8 12
Turn-Ott Delay Time td(off) '0 E 1 A, VGEN = 10 V, RG = 6 Q 45 68 ns
Fall Time tf 19 30
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/gs 4O 70
a. Pulse test; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 I I 50
VGS =10thru 5 V
Ci.:.". Ci.:]
E 30 E 30
Q 4 V D /)
E 20 / E 20
I I = o
D Q Fc 125 C
- 10 - 10 /
3 V 25°C
I I \/ -55''C
0 I 0 // l
O 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70878
S-00271-Rev. A, 26-Apr-99
VISHAY
Si4882DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030 I
5 0.025 /
8 v 4 5 v w,,,,,,,,,,"
I-', 0.020 GS s.,,,-'''"
8 s.,,..-''''"
ttt -----"'
8 0.015
CSi" 0.010 VGs=10V -
0 10 20 3O 40 50
ID - Drain Current (A)
Gate Charge
10 I pr
F VDS = 15 V
v ID = 11 A
E’ 6 /
I /--"
0 6 12 18 24 30
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To-- 150°C
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) — On-Resistance (
rDS(0n) - On-Resistance( 9)
(Normalized)
Capacitance
l Ciss
"rs.,.
12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGs=10V
- ID=11A
w''''''
,,,,,,,e'''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
lro=11A
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 70878
S-00271-Rev. A, 26-Apr-99
www.vishay.com . FaxBack 408-970-5600
Si4882DY
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 "ss. 50 y
S 0.2 , ID = 250 “A l
V 40 t
g -0_0 g l
g.' _ I Ns
8 -0 4 's, 20 l
'N. 10 's
-0.8 "s.
N “~--
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
g Duty Cycle = 0.5
'i' 'l'
8 g Notes:
El ' 0.1 -,,,,C,
'ri, E 0.1 DM
g _ 0.05
0.02 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 68°CNV
3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
it, E 0.1
8 E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70878
b4 S-00271-Rev. A, 26-Apr-99
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