SI4876DY ,N-Channel 20-V (D-S) MOSFETS-03950—Rev. C, 26-May-03 1Si4876DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4880DY ,N-Channel 30-V (D-S) MOSFETSi4880DYNew ProductVishay SiliconixN-Channel Reduced Q , Fast Switching MOSFETg
SI4876DY
N-Channel 20-V (D-S) MOSFET
VISHAY
Si4876DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
20 0.005 @ VGS = 4.5 V 21
0.0075 @ VGS = 2.5 v 17
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Ordering Information: Si4876DY
Si4876DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage l/ss i 12
TA = 25''C 21 14
Continuous Drain Current (T J = 15tPC)a ID
TA = 85°C 15 10
Pulsed Drain Current IBM 50
Avalanche Current IAS 42
L = 0.1 mH
Single Avalanche Energy EAS 88 mJ
Continuous Source Current (Diode Conduction)a Is 3 1.3 ms
TA = 25''C 3.6 1.6
Maximum Power Dissipation" PD W
TA = 85°C 1.9 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambienta RthJA
Steady State 67 80 °C/W
Maximum Junction-to-Foot (Drain) Steady State Rm“: 13 16
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71312 www.vishay.com
S-03950-Rev. C, 26-May-03
Si4876DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.6 V
Gate-Body Leakage less VDS = 0 V, VGS = i 12 V d: 100 nA
VDs=16V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=16V,VGS=0V,TJ=85°C 20
On-State Drain Currenta |D(on) Vos 2 5 V, VGS = 4.5 V 50 A
VGS = 4.5 V, '0 = 21 A 0.0037 0.005
Drain-Source On-State Resistancea rDs(on) Q
V63 = 2.5 V, ID = 17 A 0.0058 0.0075
Forward Transconductancea 9ts Vos = 10 V, ID = 21 A 17 S
Diode Forward Voltage" V30 ls = 3 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 55 8O
Gate-Source Charge Qgs VDs = 10 V, VGS = 4.5 V, ID = 21 A 13 nC
Gate-Drain Charge di 11
Gate Resistance R9 2.0 2.7 4.6 Q
Turn-On Delay Time thon) 4O 60
Rise Time tr VDD = 10 V, RL = 10 Q 30 45
Turn-Off Delay Time tam) ID E 1 A, VGEN = 10 V, R6 = 6 Q 175 260 ns
Fall Tlme k 70 105
Source-Drain Reverse Recovery Time trr IF = 3 A, di/dt = 100 Alps 56 85
a. Pulsetest; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 _ 50
V = 5 thru 2_5 V
GS 2.0 v
40 40 I
ii.:.". / Ci" /
E 30 E 30
o o //
E' 20 E 20
1‘: lg Tc = 125°C
- 10 - 10 I
1.5 v 25 C 's /
i -55°c
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71312
2 S-03950-Rev. C, 26-May-03
VISHAY
Si4876DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
- On-Resistance ( Q)
rDS(on)
V GS - Gate-to-Source Voltage (V)
Is - Source Current(A)
On-Resistance vs. Drain Current
VGS = 2.5 V
0.006 _
0.004 I/cs = 4.5 V -
0 1 0 20 30 4O 50
ID - Drain Current(A)
Gate Charge
1 0 l l
VDS=1OV
8 -ID--21A
O 20 4O 60 80 100 120 140
% - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
To = 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
(Normalized) C - Capacntance (pF)
rDS(on) - On-Resistance(§2)
roswn) » On-Resistance (Q)
Capacitance
"--.-,
2000 Coss
0 4 8 12 16 20
1/ros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
1.4 7 ID = 21 A 777747
0.8 v,,,.'''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 21 A
0.005 _
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71312
S-03950-Rev. C, 26-May-03
www.vishay.com
Si4876DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.4 l l
ID = 250 "
0.2 "ss,
-0.2 "ss,
-0.4 "s.
-50 -25 0 25 50 75 100 125 150
Power (W)
VGS(th) Variance (V)
T: - Temperature CC)
Single Pulse Power
10-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g E 0.2
"if',' E
it E th1 T
T7 L 0.1 PDM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T;
2. Per Unit Base = RNA = 67°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71312
S-03950-Rev. C, 26-May-03
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