N-Channel 20-V (D-S) MOSFET **Manufacturer:** VISHAY
**Part Number:** SI4864DY
**Specifications:**
- **Type:** Dual N-Channel MOSFET
- **Technology:** TrenchFET® Gen IV
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 6.3A per channel
- **Pulsed Drain Current (IDM):** 25A per channel
- **On-Resistance (RDS(on)):**
- 28mΩ at VGS = 10V
- 35mΩ at VGS = 4.5V
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W per channel
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** SO-8
**Descriptions:**
The SI4864DY is a dual N-Channel MOSFET designed for high-efficiency power management applications. It utilizes VISHAY's TrenchFET® Gen IV technology, offering low on-resistance and high switching performance.
**Features:**
- Low gate charge for fast switching
- Low thermal resistance
- Lead (Pb)-free and RoHS compliant
- Halogen-free according to IEC 61249-2-21
- Optimized for synchronous buck converters and DC-DC applications
