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SI4852DY
N-Channel 30-V (D-S) MOSFET + Schottky Diode
VISHAY
Si4852DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.0120@Vss=10V 11
30 0.0175@VGS=4.5V 9.5
SCHOTTKY PRODUCT SUMMARY
VSD (v)
VDS (V) Diode Forward Voltage IF (A)
30 0.53 v @ 3 A 4
OUDUJUJ
Top bfery
N-Channel MOSFET
I—H—l —OU
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage (MOSFET) VDS 30
Reverse Voltage (Schottky) VDA 30 V
Gate-Source Voltage VGS $20
Continuous Drain Current (T J = 150''C) TA = 2500 I 11 8.7
(MOSFET)a TA = 70°C D 9.0 7.0
Pulsed Drain Current (MOSFET) IBM 50
Continuous Source Current (MOSFET Diode Conduction)" ls 2.3 1.3
Average Foward Current (Schottky) IF 4.0 2.5
Pulsed Foward Current (Schottky) IFM 50
TA = 25''C 2.5 1.47
Maximum Power Dissipation (MOSFET)a
TA = 70°C 1.6 0.94
TA = 25°C 2.27 1.38
M ' P Di ' ti S h ttk a
ax1mum ower ISSIpa Ion( c o y) TA = 70"C 1.45 0.88
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 40 50 45 55
Maximum Junction-to-Ambient?' R
Steady-State thJA 72 85 75 90 ''C11N
Maximum Junction-to-Foot (Drain) Steady-State Rm": 18 22 20 25
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71307 www.vishay.com
S-03184-Rev. B, 05-Mar-01
Si4852DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) VDs = N/ss, b = 250 plA 1 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V :t 100 nA
VDS = 24 V, VGS = 0 V 0.007 0.100
Zero Gate Voltage Drain Current loss Vros = 24 V, VGS = 0 V, TJ = 100°C 1.5 10 mA
VDs=24 V, Vss= 0V, Tu =125°C 6.5 20
On-State Drain Currentb IBM) Vos 2 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 11 A 0.0100 0.0120
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 4.5 V, ID = 9.5 A 0.0145 0.0175
Forward Transconductanceb gfs VDS = 15 V, ID = 11 A 28 S
Schottky Diode Forward Voltagep VS ls = 3.0 A, VGS = 0 V 0.485 0.53 V
Schottky Diode Forward Voltageb D Is = 3.0 A, VGS = 0 V, To = 125°C 0.416 0.47
Dynamica
Total Gate Charge Q9 24 35
Gate-Source Charge Qgs VDs = 15 V, VGS = 5 V, ID = 11 A 9 nC
Gate-Drain Charge di 7.5
Turn-On Delay Time td(on) 17 30
Rise Time t, VDD=15V, RL=159 10 20
Turn-Off Delay Time tam“) ID _ 1 A, VGEN = 10 V, RG = 6 Q 60 100 ns
Fall Tlme tf 18 30
Source-Drain Reverse Recovery Time trr IF = 3.0 A, dildt = 100 Alps 40 70
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 3.0 A 0.485 0.53
Forward Voltage Drop VF IF = 3.0 A, T J = 125°C 0.416 0.47 V
Vr = 24 V 0.007 0.100
Maximum Reverse Leakage Current lrm v, = 24 V, To = 100°C 1.5 10 mA
v, = -24 V, T: = 125°C 6.4 20
Junction Capacitance CT Vr = 10 V 115 pF
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Document Number: 71307
S-03184-Rev, B, 05-Mar-01
VISHAY
Si4852DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 thru 4 V
Ct Ci.'.'.
"ii' "ic,'
t: 24 tz
o 16 o
2 V 3 V
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A V = 4.5 V
Cl 0.016 GS _---'.
“I V = 10 V ‘D
Ea' 0.012 GS E
I 0.008 0
'- 0.004
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
v05 = 15 v /
i',-,? 8 7 ID = 9.8 A / A
g !si. G"
E 6 I a a
U.) a; g
Sl 8 2
(I,-',. 4 [V
I / (7)9
0 9 18 27 36 45
Q9 - Total Gate Charge (nC)
Transfer Characteristics
TC=125°C /
25°C "ss
Jé/ 155°C1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V68 - Gate-to-Source Voltage (V)
Capacitance
0 6 12
18 24 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS=10V
- ID=9.8A
",,p''''
-50 -25 O 25
50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 71307
S-03184-Rev. B, 05-Mar-01
wwwvishay.com
Si4852DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100 0.05
A a 0.04
tC T J = 150°C V
E 10 8
's a' 0.03
it c's
tn C) 0.02
I 1 L N ID = 9.3 A
m fsi c...,.,..
P 0.01
0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient
30 100
tl-'', g 60
o 0.1 tg
g 0.01 40
_ 20 x
0.001 _
"ss,..,
0.0001 0 25 50 75 100 125 150 0
0.001 0.01 0.1 1 10
T., - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
"'fz,' Duty Cycle = 0.5
g E 0.2
g E Notes:
E g -T-
g a 0.1 PDM
g .5 I
F, -lt-I ta tl
0.02 1. Duty Cycle, D ta
2. Per Unit Base = RmJA = 72°C/W
. 3, TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 1ty-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71307
S-03184-Rev, B, 05-Mar-01
“3% Si4852DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
fi, Duty Cycle = 0.5
2‘21 0.2
E g 0.1
'ji 55-, 0.1
g I- 0.05
Git 0.02
Single Pulse
Itr4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 71307 www.vishaycom
S-03184-Rev. B, 05-Mar-01 5
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