SI4842DY ,N-Channel 30-V (D-S) MOSFETS-03662—Rev. B, 14-Apr-033I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistanc ..
SI4848DY ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4848DY ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 1Si4848DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4848DY-T1 ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4848DY-T1 ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 1Si4848DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI4842DY
N-Channel 30-V (D-S) MOSFET
C=C7'"
VISHAY
Si4842 DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) ID (A)
30 0.0045 @ VGS = 10 v 23
0.006@Vss=4.5V 19
U)(DUJO)
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGS $20
TA = 25°C 23 15
Continuous Drain Current (T J = 150"C)a ID
TA = 70''C 19 12
Pulsed Drain Current (10 us Pulse VNMth) IBM 60
Continuous Source Current (Diode Conduction)a ls 2.9 1.3
TA = 25°C 3.5 1.6
Maximum Power Dissipation" PD W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambient?' Steady State RNA 67 80 “CNV
Maximum Junction-to-Foot (Drain) Steady State Rm“: 13 16
a. Surface Mounted on l" x l" FR4 Board.
DocumentNumber: 71325
S-03662-Rev. B, 14-Apr-03
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Si4842DY
CCCD7'"
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 1.0 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=55c'C 5 ”A
On-State Drain Current3 'D(on) VDS 2_' 5 V, VGS = 10 V 30 A
VGS = 10 V, lry = 23 A 0.0037 0.0045
Drain-Source On-State Resistancea rDS(on) Q
Ffss = 4.5 V, ID = 17 A 0.0048 0.006
Forward Transconductancea gfs VDs = 15 V, ID = 23 A 80 S
Diode Forward Voltage" VSD ls = 2.9 A, VGS = O V 0.75 1.1
Dynamicb
Total Gate Charge Q9 25 35
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 23 A 6.7 nC
Gate-Drain Charge di 9.7
Gate Resistance Re 1.0 1.9 3.2 Q
Turn-On Delay Tlme tdwn) 17 30
Rise Time t, VDD =15 V, RL =15 Q 10 20
Turn-Off Delay Tlme tam) ID E 1 A, VGEN = 10 V, Re = 6 Q 65 130 ns
Fall Time 1f 35 60
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width 5 300 MS, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS=10thru4V I
a 40 a? I
"if,' 3 V "'t' 30
h ---"""" L a
‘5 30 '5 Tc = 125 C
Es Es 20
I 20 I 25°C /
Cl o 'sk
- - 10 I
10 -55''C
0 1 2 3 4 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
VGs - Gate-to-Source Voltage (V)
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DocumentNumber: 71325
S-03662-Rev. B, 14-Apr-03
C=C7'"
VISHAY
Si4842 DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On—Resistance( g2)
- Gate—to-Source Voltage (V)
ls - Source Current(A)
On-Resistance vs. Drain Current
VGS = 4.5 V
0.004 Was-- 10V -
0 IO 20 30 40 5O 60
ID - Drain Current(A)
10 Gate Charge
VDS = 15 V
8 - ID = 23 A w,,p''''
6 ",,,W''''
4 s,,,,w'''''
0 10 20 30 40 50 60
Q9 - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDS(0n) - On-Resistance(9)
(Normalized)
rosmn) — On-Resistanoe ( Q
Capacitance
'ss. Ciss
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS=10V /
- lro=23A ',,i''"
t,,w''''
w,,.''''
,,,,,w"
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
l b--23A
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
DocumentNumber: 71325
S-03662-Rev. B, 14-Apr-03
www.vishay.com
. CCCD7'"
Si4842DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power
0.6 60
J4 "s, 50
O 2 "% ID = 250 11A l
0 0 40
-0 2 "s, a 30
"s. ii
-0 4 tl.
-0.8 ‘n.
... ‘~__
-1.0 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
T J - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E: Duty Cycle = 0.5
, 3 0.2
.8. E Notes:
lt E 0.1 T
8 o 0.1 PM
M .5 1
g -ly-1 ta t
a 1. Duty Cycle, D = (-1,
2. Per Unit Base = Rth0A = 67°CNV
. 3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
, a 0.2
if',' g
E a 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71325
S-03662-Rev. B, 14-Apr-03
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