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SI4838DY
N-Channel 12-V (D-S) MOSFET
C=C7'"
VISHAY
Si4838DY
New Product
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
12 0.003 @ Vss = 4.5 v 25
0.004 @ VGS = 2.5 v 20
OCDCDU)
Top Vew
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 12
Gate-Source Voltage V63 d: 8
TA = 25°C 25 17
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 20 13
Pulsed Drain Current (10 us Pulse VWdth) IDM 60
Continuous Source Current (Diode Conduction)" Is 2.9 1.3
TA = 25°C 3.5 1.6
Maximum Power Dissipation" PD W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambienta RthJA
Steady State 67 80 'C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
a. Surface Mounted on l" x l" FR4 Board.
DocumentNumber: 71359
S-03662-Rev. C, 14-Apr-03
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Si4838DY
CCCD7'"
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 0A 0.6 V
Gate-Body Leakage ksss VDS = 0 V, VGS = 18 V i 100 nA
VDS=9.6V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=9.6 V,Vss=0V,Tu=551 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V, ko = 25 A 0.0024 0.003
Drain-Source On-State Resistancea rDS(on) Q
Ffss = 2.5 V, ID = 20 A 0.0031 0.004
Forward Transconductancea gfs VDs = 6 V, ID = 25 A 80 S
Diode Forward Voltage" VSD ls = 2.9 A, VGS = O V 0.75 1.1
Dynamicb
Total Gate Charge Q9 40 60
Gate-Source Charge Qgs VDS = 6 V, VGS = 4.5 V, ID = 25 A 6.7 nC
Gate-Drain Charge di 9.2
Gate Resistance Re 1.0 1.7 2.9 Q
Turn-On Delay Tlme tdwn) 40 60
Rise Time t, VDD = 6 V, RL = 6 Q 40 60
Turn-Off Delay Time tam) ID E 1 A, VGEN = 4-5 V, RG = 6 Q 140 210 ns
Fall Time 1f 70 100
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 gs, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
VGS=5thru2V Ill
50 50 //I
a 40 a" 40
it 30 t 30
I)-] (rj Tc=125°C //l
Cl 20 CI 20 I
D D / h
- - 25°C
.5V 'st /
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0
VDs - Drain-to-Source Voltage (V)
VGs - Gate-to-Source Voltage (V)
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DocumentNumber: 71359
S-03662-Reu. C, 14-Apr-03
C=C7'"
VISHAY
Si4838DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 2.5 V
0.003 - I
VGS = 4.5 V
rDS(on) — On—Resistance( Q)
C - Capacitance(pF)
0 IO 20 30 40 50 60
ID - Drain Current(A)
Gate Charge
VDS=6V
4 - lro=25A
(Normalized)
- Gate—to-Source Voltage (V)
rDS(0n) - On-Resistance(9)
0 9 18 27 36 45
Qg - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
Is - Source Current(A)
rosmn) — On-Resistanoe ( g2
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage(V)
Capacitance
6000 l
Ns.. Ci s
'm--.-,
3000 \\
'ss Coss
C "'''ss. a---,
1500 rss
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I l
VGS = 4.5 V
1.4 - ID = 25 A ,,,,/''
1.2 ,,,,,,,p'''''''''
0.8 'P" w,,,,,,-''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 25 A
0.003 _
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
DocumentNumber: 71359
S-03662-Rev. C, 14-Apr-03
www.vishay.com
. CCCD7'"
Si4838DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power
0.4 60
0.2 "s. 50
I =250
-0.0 D ”A l
-O.2 iit (
-0 4 \ g \
-0.6 N
-0.8 10
_ ‘~__
-1.0 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
T J - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ll' Duty Cycle = 0.5
if',' g
lt , 0.1 T
8 o th1 EM
g ‘15,th
a 1. Duty Cycle, D = (-1,
2. Per Unit Base = Rth0A = 67°CNV
. 3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
r'-- m
, a 0.2
if',' g
E E 0.1
E g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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S-03662-Reu. C, 14-Apr-03
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