SI4833DY ,P-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode FaxBack 408-970-5600S-56941—Rev. B, 02-Nov-982-1Si4833DYVishay Siliconix
SI4833DY
P-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode
Si4833DY
Vishay Siliconix
VISHAY
P-Channel 3o-v (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY “A
VDs (V) "DS(on) (Q) ID (A) ?\US
-30 0.085 @ VGS = -10 v i3.5 o't
0.180@VGs=-45V i2.5 ty
SCHOTTKY PRODUCT SUMMARY
VF (V)
VKA (V) Diode Forward Voltage IF (A)
30 0.5
[email protected] 1.4
SO-8 s K
K G 'T
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) Vos -30
Reverse Voltage (Schottky) VKA 30 V
Gate-Source Voltage (MOSFET) Was $20
TA = 25°C l 3.5
Continuous Drain Current (TJ = 150°C) (MOSFET)' b ID
TA = 70°C i 2.8
Pulsed Drain Current (MOSFET) IDM cl: 20 A
Continuous Source Current (MOSFET Diode Conduction)' b ls - 1.7
Average Foward Current (Schottky) IF 1.4
Pulsed Foward Current (Schottky) IFM 30
TA = 25°C 2
Maximum Power Dissipation (MOSFET)a, b
TA = 70°C 1.3
TA = 25°C IS
Maximum Power Dissipation (Schottky)' b
TA = 70''C 1.2
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 62.5
Maximum Junction-to-Ambient (t s 10 sec)3
Schottky 65
RthJA "CAN
MOSFET 90
Maximum Junction-to-Ambient (t = steady state)a
Schottky 92
a. Surface Mounted on FR4 Board,
b. t s 10 sec.
Document Number: 70796
S-56941-Rev. B, 02-Nov-98
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Si4833DY
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MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGs. ID = -250 pA -1.0 V
Gate-Body Leakage less VDS = 0 V, VGS = i 20 V i 100 nA
Vos = -30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss WA
VDs=-30V,VGs=0V,To=550C -25
On-State Drain Currenta low") VDs 2 -5 V, VGs = -10 V -1 5 A
1/Gs=-10V, ID =-2.5A 0.066 0.085
Drain-Source On-State Resistance" rDS(on) Q
Vss---4.5 V, II): -1.8A 0.125 0.180
Forward Transconductancea gts Vos = -10 V, ID = -2.5 A 5.0 S
Diode Forward Voltagea VSD Is = -1.7 A, VGS = 0 V -0.8 -1.2
Dynamicb
Total Gate Charge Q9 8.7 15
Gate-Source Charge Qgs VDS = -1 0 V, VGS = -10 V, ID = -2.5 A 1.9 nC
Gate-Drain Charge di 1.3
Turn-On Delay Time td(on) 7 15
Rise Tlme tr VDD = -10 V, RL =10 Q 9 18
Turn-Off Delay Time tu(ott) ID _ -1 A, VGEN = -10 V, Rs = 6 Q 14 27 ns
Fall Time tf 8 15
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width 3 300 ps. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTI'KY SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF=1.0A 0.45 0.5
Forward Voltage Drop VF V
IF= 1.0 A,TJ= 125°C 0.36 0.42
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current lrm v, = 30 V, TJ = 100"C 0.7 10 mA
Vr---30V,To--125c'C 3.0 20
Junction Capacitance CT v, = 10 V 62 pF
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Si4833DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10, 9, 8, 7, 6V
Ci.] / W iii:]
's V" a
Es 8 E
I 4 V I
_ 4 / -
0 2 4 6 8
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.32 I
g 'j.1:S
73 0.24 8
E VGS = 4.5 v g
I 0.16 "..,.,e" (I)
’5 -''''''' Q
il" VGS = 10 V
" 0.08 4;
0 3 6 9 12 15
ID - Drain Current (A)
1 0 Gate Charge
A Vos = 10 v s,/''
i) 8 _ ID = 2.5 A Ct
53 /" a:
E 6 / g-,' a
o? , g
P. O o
g, 4 d I E
o ' ig'"
0 2 4 6 8 10
% - Total Gate Charge (nC)
MOSFET
Transfer Characteristics
TC = -55"C Jj/
16 Al 25°C _
0 2 4 6 8
Was - Gate-to-Source Voltage(V)
Capacitance
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
2 0 On-Resistance vs. Junction Temperature
1.8 - VGS=1OV
lD=2.5 A
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70796
S-56941-Rev. B, 02-Nov-98
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Si4833DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.5
t.ti.. t;
E :2 0.3
E T J = 150°C 5 l
g O 0.2
(n I l
I A I = 2 5 A
m g D .
f 0.1 "sa,.,.
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V39 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 l l 35
ID = 250 plA \
0.6 28 l
:,1.i? 0.4 // l
8 g 21 7 V" - - - i
i),' o 2 t, \
i', . w,p''''" g \
i',--'; (L 14 't,
> (ho 'ss,
-0.2 7 "ss.
~~‘II-
-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
I' 3 Notes:
Lu N DM
E E 0.1 k
- -1 t _
, te t
t, 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 90°CNV
3. TJM - TA = PDMZmJAm
Single Pulse 4, Surface Mounted
IO-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
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Document Number: 70796
S-56941-Rev, B, 02-Nov-98
Si4833DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
a:" 1 A
g G. T J = 150°C
8 0.1 3
/l! 0.01 LID.
0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6
Tu - Junction TemperatureCC) VF - Forward Voltage Drop(V)
Capacitance
15 150
.9 100
, "ss-,,,.......,
O 4 8 12 16 20
VKA - Reverse Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 92°CNV
Normalized Effective Transient
Thermal Impedance
3. To, - TA = PDMZthAm
4. Surface Mounted
Single Pulse
104 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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